參數(shù)資料
型號: TMS28F010A-17C3DUE4
廠商: Texas Instruments, Inc.
英文描述: 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
中文描述: 1048576位閃存電可擦除可編程只讀存儲器
文件頁數(shù): 19/22頁
文件大?。?/td> 328K
代理商: TMS28F010A-17C3DUE4
TMS28F010A
1048576-BIT FLASH
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993
19
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
0 V
Power Up
and
Standby
Set-Up-
Program
Command
Program
Command
Latch
Address
and Data Programming
Program
Verify
Command
Program
Verification
Standby/
Power Down
A0–A16
E
G
W
DQ0–DQ7
tc(W)
tsu(A)
tsu(A)
th(D)
tw(W)
tsu(D)
ta(E)
tsu(VPPEL)
th(WHD)
Data In = 40h
Data In
Data In = C0h
Valid Data Out
th(A)
tc(R)
th(E)
5 V
VCC
VPPH
VPPVPPL
tr(VPP)
tsu(EHVPP)
tf(VPP)
tw(WH)
tc(W)PR
trec(W)
th(A)
tdis(E)
tdis(G)
td(E)
tsu(E)
th(E)
tc(W)
tsu(E)
tsu(E)
th(E)
th(WHD)
tc(W)
trec(R)
th(WHD)
tw(W)
tsu(D)
HI-Z
tw(W)
tsu(D)
td(G)
ten(G)
Figure 6. Write Cycle Timing
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