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| 型號(hào)： | TMS28F010A-15C3FML4 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| 中文描述： | 1048576位閃存電可擦除可編程只讀存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 14/22頁(yè) |
| 文件大?。?/td> | 328K |
| 代理商： | TMS28F010A-15C3FML4 |
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TMS28F010A
1048576-BIT FLASH
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993
14
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature
PARAMETER
TEST CONDITIONS
IOH = – 2.5 mA
IOH = – 100
μ
A
IOL = 5.8 mA
IOL = 100
μ
A
A9 = VID max
VI = 0 V to 5.5 V
VI = 0 V to 13 V
VO = 0 V to VCC
VPP = VPPH,
VPP = VPPL
VPP = VPPH
VPP = VPPH
MIN
2.4
MAX
UNIT
VOH
High level output voltage
High-level output voltage
V
VCC– 0.4
VOL
Low level output voltage
Low-level output voltage
0.45
V
0.1
IID
A9 algorithm-selection-mode current
200
±
1
±
200
±
10
200
±
10
μ
A
II
Input current (leakage)
All except A9
A9
μ
A
IO
Output current (leakage)
μ
A
μ
A
μ
A
mA
IPP1
VPPsupply current (read/standby)
VPP supply current (read/standby)
Read mode
IPP2
IPP3
VPP supply current (during program pulse) (see Note 4)
VPP supply current (during flash erase) (see Note 4)
VPP supply current (during program/erase verify)
(see Note 4)
30
30
mA
IPP4
VPP = VPPH
5.0
mA
ICCS
VCCsupply current (standby)
VCC supply current (standby)
TTL-input level
VCC = 5.5 V,
VCC = 5.5 V,
VCC = 5.5 V
f = 6 MHz,
E = VIH
E = VCC
E = VIL,
Outputs open
1
mA
μ
A
CMOS-input level
100
ICC1
VCC supply current (active read)
30
mA
ICC2
VCC average supply current (active write) (see Note 4)
VCC = 5.5 V,
Programming in progress
E = VIL,
10
mA
ICC3
VCC average supply current (flash erase) (see Note 4)
VCC = 5.5 V,
Erasure in progress
E = VIL,
15
mA
ICC4
VCC average supply current (program/erase verify)
(see Note 4)
VCC = 5.5 V,
VPP = VPPH,
Program/erase-verify in progress
E = VIL,
15
mA
NOTE 4: Not 100% tested; characterization data available.
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz
PARAMETER
TEST CONDITIONS
VI = 0 ,
VO = 0,
MIN
MAX
UNIT
pF
Ci
Co
Capacitance measurements are made on sample basis only.
Input capacitance
f = 1 MHz
6
Output capacitance
f = 1 MHz
12
pF
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| TMS28F010A-15C3FMQ4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
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| TMS28F010A-15C3NE4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS28F010A-15C3NL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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