參數(shù)資料
型號(hào): TMS28F010A-10C3NL4
廠商: Texas Instruments, Inc.
英文描述: 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
中文描述: 1048576位閃存電可擦除可編程只讀存儲(chǔ)器
文件頁(yè)數(shù): 21/22頁(yè)
文件大?。?/td> 328K
代理商: TMS28F010A-10C3NL4
TMS28F010A
1048576-BIT FLASH
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993
21
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
Power Up
and
Standby
Set-Up-
Erase
Command
Erase
Command
Erasing
Erase-
Verify
Command
Erase
Verification
Standby/
Power Down
A0–A16
E
G
W
DQ0–DQ7
5 V
VCC
0 V
VPPH
VPP
VPPL
tc(W)
tsu(A)
tdis(G)
th(D)
th(WHD)
tw(W)
tsu(D)
td(E)
ta(E)
tsu(VPPEL)
th(WHD)
Data In = 20h
Data In = 20h
Data In = A0h
Valid Data Out
th(A)
tsu(E)
tr(VPP)
tsu(EHVPP)
tf(VPP)
tdis(E)
HI-Z
td(G)
ten(G)
tw(W)
tsu(D)
th(WHD)
tw(W)
tsu(D)
th(E)
tc(W)
tc(R)
th(E)
th(E)
tw(WH)
tc(E)B
trec(W)
tc(W)
tsu(E)
tsu(E)
trec(R)
Figure 8. Flash-Erase Cycle Timing
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