參數(shù)資料
      型號(hào): TMP01FS
      廠商: Analog Devices, Inc.
      元件分類: 溫度傳感器
      英文描述: Low Power, Programmable Temperature Controller
      中文描述: 低功耗,可編程溫度控制器
      文件頁數(shù): 10/16頁
      文件大?。?/td> 377K
      代理商: TMP01FS
      TMP01
      REV. C
      –10–
      Switching Loads With T he Open-Collector Outputs
      In many temperature sensing and control applications some type
      of switching is required. Whether it be to turn on a heater when
      the temperature goes below a minimum value or to turn off a
      motor that is overheating, the open-collector outputs Over and
      Under can be used. For the majority of applications, the switches
      used need to handle large currents on the order of 1 amp and
      above. Because the T MP01 is accurately measuring tempera-
      ture, the open-collector outputs should handle less than 20 mA
      of current to minimize self-heating. Clearly, the Over-temp and
      Under-temp outputs should not drive the equipment directly.
      Instead, an external switching device is required to handle the
      large currents. Some examples of these are relays, power
      MOSFET s, thyristors, IGBT s, and Darlingtons.
      Figure 15 shows a variety of circuits where the T MP01 controls
      a switch. T he main consideration in these circuits, such as the
      relay in Figure 15a, is the current required to activate the
      switch.
      MOTOR
      SHUTDOWN
      2604-12-311
      COTO
      IN4001
      OR EQUIV.
      +12V
      R1
      R2
      R3
      TEMPERATURE
      SENSOR &
      VOLTAGE
      REFERENCE
      1
      2
      3
      4
      7
      HYSTERESIS
      GENERATOR
      WINDOW
      COMPARATOR
      TMP01
      VPTAT
      VREF
      8
      5
      6
      Figure 15a. Reed Relay Drive
      It is important to check the particular relay you choose to ensure
      that the current needed to activate the coil does not exceed the
      T MP01’s recommended output current of 20 mA. T his is easily
      determined by dividing the relay coil voltage by the specified
      coil resistance. K eep in mind that the inductance of the relay
      will create large voltage spikes that can damage the T MP01 out-
      put unless protected by a commutation diode across the coil, as
      shown. T he relay shown has a contact rating of 10 watts maxi-
      mum. If a relay capable of handling more power is desired, the
      larger contacts will probably require a commensurately larger
      coil, with lower coil resistance and thus higher trigger current.
      As the contact power handling capability increases, so does the
      current needed for the coil. In some cases an external driving
      transistor should be used to remove the current load on the
      T MP01 as explained in the next section.
      Power FET s are popular for handling a variety of high current
      DC loads. Figure 15b shows the T MP01 driving a p-channel
      MOSFET transistor for a simple heater circuit. When the out-
      put transistor turns on, the gate of the MOSFET is pulled down
      to approximately 0.6 V, turning it on. For most MOSFET s a
      gate-to-source voltage or Vgs on the order of –2 V to –5 V is suf-
      ficient to turn the device on. Figure 15c shows a similar circuit
      for turning on an n-channel MOSFET , except that now the gate
      to source voltage is positive. Because of this reason an external
      transistor must be used as an inverter so that the MOSFET will
      turn on when the “Under T emp” output pulls down.
      NC = NO CONNECT
      NC
      NC
      IRFR9024
      OR EQUIV.
      HEATING
      ELEMENT
      2.4k
      (12V)
      1.2k
      (6V)
      5%
      V+
      R1
      R2
      R3
      TEMPERATURE
      SENSOR &
      VOLTAGE
      REFERENCE
      1
      2
      3
      4
      7
      HYSTERESIS
      GENERATOR
      WINDOW
      COMPARATOR
      TMP01
      VPTAT
      VREF
      8
      5
      6
      Figure 15b. Driving a P-Channel MOSFET
      IRF130
      NC = NO CONNECT
      NC
      NC
      2N1711
      HEATING
      ELEMENT
      V+
      R1
      R2
      R3
      4.7k
      4.7k
      TEMPERATURE
      SENSOR &
      VOLTAGE
      REFERENCE
      1
      2
      3
      4
      HYSTERESIS
      GENERATOR
      WINDOW
      COMPARATOR
      TMP01
      VPTAT
      VREF
      7
      8
      5
      6
      Figure 15c. Driving a N-Channel MOSFET
      Isolated Gate Bipolar T ransistors (IGBT ) combine many of the
      benefits of power MOSFET s with bipolar transistors, and are
      used for a variety of high power applications. Because IGBT s
      have a gate similar to MOSFET s, turning on and off the devices
      is relatively simple as shown in Figure 15d. T he turn on voltage
      for the IGBT shown (IRGBC40S) is between 3.0 and 5.5 volts.
      T his part has a continuous collector current rating of 50 A and a
      maximum collector to emitter voltage of 600 V, enabling it to
      work in very demanding applications.
      IRGBC40S
      NC = NO CONNECT
      NC
      NC
      2N1711
      V+
      R1
      R2
      R3
      4.7k
      4.7k
      TEMPERATURE
      SENSOR &
      VOLTAGE
      REFERENCE
      1
      2
      3
      4
      HYSTERESIS
      GENERATOR
      WINDOW
      COMPARATOR
      TMP01
      VPTAT
      VREF
      7
      8
      5
      6
      MOTOR
      CONTROL
      Figure 15d. Driving an IGBT
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      相關(guān)代理商/技術(shù)參數(shù)
      參數(shù)描述
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