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參數(shù)資料
| 型號： | TM90EZ-24 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE |
| 中文描述： | 高壓大功率常規(guī)使用絕緣型 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 67K |
| 代理商： | TM90EZ-24 |
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
V
RRM
V
RSM
V
R (DC)
V
DRM
—
V
DSM
—
V
D (DC)
—
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
—
Item
Thyristor
Diode
P
GM
—
PG
(AV)
—
V
FGM
—
I
FGM
—
T
j
T
stg
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
I
RRM
I
DRM
—
dv/dt
—
V
GT
—
V
GD
—
V
TM
V
FM
I
GT
—
R
th (j-c)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
CURRENT
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
0
10
10
0.40
C
G
S
C
T
(
°
C
CONDUCTION TIME (CYCLE AT 60Hz)
FORWARD VOLTAGE (V)
GATE CURRENT (mA)
TIME (s)
R
th (c-f)
–1
10
–3
10
–2
10
7
0
10
1
1
7
5
3
2
10
0
7
5
3
2
10
1
10
2
10
3
10
4
10
–1
7
5
4
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.8
10
70
50
30
20
7
5
3
2
0
400
2000
800
1200
1600
10
1
100
7
5
3
2
7
5
3
2
7
5
3
2
3
2
4
V
GT
=3.0V
I
=
100mA
I
F
=
P
GM
=5.0W
V
FGM
=10V
V
GD
=0.25V
P
=
0.50W
T
j
=25°C
1.0
1.2
1.6
1.8
1.4
T
j
=125°C
7
5
3
2
7
5
3
2
5
3
2
0
7
5
3
2
0.05
0.10
0.15
0.20
0.25
0.30
0.35
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TM90EZ-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE |
| TM90EZ-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM90EZ-M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM90RZ-24 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE |
| TM90RZ-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE |
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