參數(shù)資料
型號(hào)： TM861S-L
廠商： SANKEN ELECTRIC CO LTD
元件分類： 晶閘管
英文描述： TO-220F 8A Triac
中文描述： 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 58K
代理商： TM861S-L
0
2
4
6
8
10
12
0
1
2
3
0.5
0.3
1
5
10
50
100
1.0
2.0
3.6
3.0
40
20
0
80
60
100
1
5
10
50
100
50Hz
0
Gate trigger current
I
GT
(mA)
0
2
1
3
20
80
40 60
P
GM
=W
–40
0
75
100
25
50
125
0
20
10
0
0
2
12
8
10
4
6
2
4
6
8
10
0
0
25
50
100
75
150
125
2
4
10
6
8
50%
0.5 1
10
10
10
0.1
1
30
10
2
3
10
4
0.5 1
10
10
10
0.1
1
30
10
2
3
10
4
0.5 1
10
Pulse width
t
w (
μ
s)
10
10
0.1
1
30
10
2
3
10
4
0.5 1
10
Pulse width
t
w (
μ
s)
10
10
0.1
1
30
10
2
3
10
4
0.5 1
10
Pulse width
t
w (
μ
s)
10
10
0.1
1
30
10
2
3
10
4
0.5 1
10
Pulse width
t
w (
μ
s)
10
10
0.1
1
30
10
2
3
10
4
0.1
1
10
10
10
0.1
1
10
2
3
10
4
10
5
–40
0
75
100
25
50
125
0
1.0
0.8
0.6
0.4
0.2
1.2
–40
0
75
100
25
50
125
0
24
20
10
0
0
25
50
100
75
150
125
1.0
1.5
0.5
RMS on-state current I
T(RMS)
(A)
2.0
2.5
3.0
37
TM841M-L,TM861M-L
On-state voltage
v
T
(V)
O
i
T
(
v
T
–
i
T
Characteristics (max)
Tj=25
°
C
Tj=125
°
C
Number of cycle
S
T
(
I
TSM
Ratings
1cycle
10ms
I
TSM
Tj=125
°
C
Initial junction temperature
Gate current
i
GF
(A)
G
v
G
(
Gate Characteristics
See graph at the upper right
G
G
T
°
C
T
°
C
T
°
C
RMS on-state current I
T(RMS)
(A)
I
T(RMS)
–P
T(AV)
Characteristics
A
T
Full-cycle sinewave
Conduction angle:360
°
Full-cycle sinewave
Conduction angle:360
°
RMS on-state current I
T(RMS)
(A)
I
T(RMS)
–Tc Ratings
C
C
°
C
I
T(RMS)
–Ta Ratings
A
a
°
C
Full-cycle sinewave
Conduction angle:360
°
Self-supporting
Natural cooling
No wind
Junction temperature Tj (
°
C)
H
H
I
H
temperature Characteristics
(Typical)
(
V
D
=30V
)
(T
2
+
–T
1
–
)
(T
2
–
–T
1
+
)
Pulse trigger temperature Characteristics
i
gt
(Typical)
(MODE–
)
(MODE–
)
(MODE–
)
(MODE–
)
(MODE–
)
(MODE–
)
Pulse trigger temperature Characteristics
v
gt
(Typical)
v
g
(
V
G
D
(
v
°
C
)
)
G
a
t
w
v
g
(
V
G
D
(
v
°
C
)
)
G
a
t
w
v
g
(
V
G
D
(
v
°
C
)
)
G
a
t
w
v
gt
t
w
Tj=–40
°
C
–20
°
C
25
°
C
75
°
C
125
°
C
50%
v
gt
t
w
Tj=–40
°
C
–20
°
C
25
°
C
75
°
C
125
°
C
50%
v
gt
t
w
Tj=–40
°
C
–20
°
C
25
°
C
75
°
C
125
°
C
Pulse width
t
w (
μ
s)
i
g
(
I
G
D
(
c
°
C
)
)
G
a
t
w
Pulse width
t
w (
μ
s)
i
g
(
I
G
D
(
c
°
C
)
)
G
a
t
w
i
g
(
I
G
D
(
c
°
C
)
)
G
a
t
w
i
gt
50%
t
w
Tj=–40
°
C
–20
°
C
25
°
C
75
°
C
125
°
C
i
gt
50%
t
w
Tj=–20
°
C
°
C
25
°
C
75
°
C
125
°
C
i
gt
50%
t
w
Tj=–40
°
C
–20
°
C
25
°
C
75
°
C
125
°
C
Junction temperature Tj (
°
C)
G
G
(
V
GT
temperature characteristics
(Typical)
MODE (T
2
+
,G
+
)
MODE (T
2
+
,G
–
)
MODE (T
2
–
,G
–
)
(V
D
=6V, R
L
=10
)
I
GT
temperature characteristics
(Typical)
Junction temperature Tj (
°
C)
G
G
(
(V
D
=6V, R
L
=10
)
MODE (T
2
+
, G
+
)
MODE (T
2
+
, G
–
)
MODE (T
2
–
, G
–
)
t, Time (ms)
T
r
t
(
°
C
Transient thermal resistance
Characteristics
Junction to
Junction to
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