參數(shù)資料
型號(hào): TM55EZ-M
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER GENERAL USE INSULATED TYPE
中文描述: 中功率常規(guī)使用絕緣型
文件頁數(shù): 3/5頁
文件大小: 67K
代理商: TM55EZ-M
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
Item
Thyristor
Diode
P
GM
PG
(AV)
V
FGM
I
FGM
T
j
T
stg
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
I
RRM
I
DRM
dv/dt
V
GT
V
GD
V
TM
V
FM
I
GT
R
th (j-c)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
CURRENT
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
0
10
10
0.8
C
G
S
C
T
(
°
C
CONDUCTION TIME (CYCLE AT 60Hz)
FORWARD VOLTAGE (V)
GATE CURRENT (mA)
TIME (s)
R
th (c-f)
–3
10
–2
10
7
–1
10
0
10
1
1
7
5
3
2
10
0
7
5
3
2
10
4
10
3
10
2
10
1
10
–1
7
5
4
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4
10
70
50
30
20
7
5
3
2
200
400
1200
600
800
1000
10
1
100
7
5
3
2
7
5
3
2
7
5
3
2
3
2
4
V
GT
=3.0V
I
=
100mA
I
F
=
P
GM
=5W
V
FGM
=10V
V
GD
=0.25V
P
=
0.50W
T
j
=25°C
0.8
1.2
2.0
2.4
1.6
T
j
=125°C
7
5
3
2
7
5
3
2
5
3
2
0
7
5
3
2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
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