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參數(shù)資料
| 型號(hào)： | TM55EZ-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER GENERAL USE INSULATED TYPE |
| 中文描述： | 中功率常規(guī)使用絕緣型 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | TM55EZ-H |
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
μ
s
W
W
V
V
A
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180
°
conduction, T
C
=86
°
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125
°
C
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
86
55
1100
5.0
×
10
3
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
I
T (RMS)
, I
F (RMS)
I
T (AV)
, I
F (AV)
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
—
—
Parameter
RMS current
Average current
Surge (non-repetitive) current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
μ
s
V
V
mA
°
C/W
°
C/W
M
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j
=125
°
C, V
RRM
applied
T
j
=125
°
C, V
DRM
applied
T
j
=125
°
C, I
TM
=I
FM
=165A, instantaneous meas.
T
j
=125
°
C, V
D
=2/3V
DRM
T
j
=25
°
C, V
D
=6V, R
L
=2
T
j
=125
°
C, V
D
=1/2V
DRM
T
j
=25
°
C, V
D
=6V, R
L
=2
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
10
10
1.35
—
3.0
—
100
0.5
0.2
—
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
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| TM55EZ-M | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
| TM55RZ-24 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
| TM55RZ-2H | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
| TM55RZ-H | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
| TM55RZ-M | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
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