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參數(shù)資料
| 型號： | TM497BBK32-80 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4194304 BY 32-BIT DYNAMIC RAM MODULE |
| 中文描述： | 4194304由32位動態(tài)隨機存儲器模塊 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 118K |
| 代理商： | TM497BBK32-80 |
TM497BBK32, TM497BBK32S
4194304 BY 32-BIT
DYNAMIC RAMMODULE
SMMS433B – JANUARY 1993 – REVISED JUNE 1995
5
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
CC
(see Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage range on any pin (see Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short-circuit output current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to VSS.
– 1 V to 7 V
– 1 V to 7 V
50 mA
8 W
0
°
C to 70
°
C
– 55
°
C to 125
°
C
recommended operating conditions
MIN
4.5
NOM
MAX
5.5
UNIT
V
VCC
VIH
VIL
TA
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic-voltage levels only.
Supply voltage
5
High-level input voltage
2.4
6.5
V
Low-level input voltage (see Note 2)
– 1
0.8
V
°
C
Operating free-air temperature
0
70
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
’497BBK32-60
MIN
’497BBK32-70
MIN
’497BBK32-80
MIN
UNIT
MAX
MAX
MAX
VOH
VOL
High-level output voltage
IOH = – 5 mA
IOL = 4.2 mA
VCC = 5.5 V,
All others = 0 V to VCC
VCC = 5.5 V,
CAS high
2.4
2.4
2.4
V
Low-level output voltage
0.4
0.4
0.4
V
II
Input current (leakage)
VI = 0 V to 6.5 V,
±
80
±
80
±
80
μ
A
IO
Output current (leakage)
VO = 0 V to VCC,
±
10
±
10
±
10
μ
A
ICC1
Read- or write-cycle current
(see Note 3)
VCC = 5.5 V,
Minimum cycle
880
800
720
mA
ICC2
Standby current
VIH = 2.4 V (TTL),
After 1 memory cycle,
RAS and CAS high
16
16
16
mA
VIH = VCC – 0.2 V (CMOS),
After 1 memory cycle,
RAS and CAS high
8
8
8
mA
ICC3
Average refresh current
(RAS only or CBR)
(see Note 3)
VCC = 5.5 V,
RAS cycling,
(RAS only);
CAS low (CBR)
Minimum cycle,
CAS high
RAS low after
880
800
720
mA
ICC4
Average page current
(see Note 4)
For test conditions shown as MIN/MAX, use the appropriate value specified under recommended operating conditions.
NOTES:
3. Measured with a maximum of one address change while RAS = VIL
4. Measured with a maximum of one address change while CAS = VIH
VCC = 5.5 V,
RAS low,
tPC = MIN,
CAS cycling
560
480
400
mA
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相關代理商/技術參數(shù) |
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| TM497BBK32S | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304 BY 32-BIT DYNAMIC RAM MODULE |
| TM497BBK32S-60 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304 BY 32-BIT DYNAMIC RAM MODULE |
| TM497BBK32S-70 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304 BY 32-BIT DYNAMIC RAM MODULE |
| TM497BBK32S-80 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304 BY 32-BIT DYNAMIC RAM MODULE |
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