參數(shù)資料
型號： TM248NBK36B-80
廠商： Texas Instruments, Inc.
英文描述： CAP 82PF 100V CERAMIC MONO 5%
中文描述： 動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊
文件頁數(shù)： 8/11頁
文件大小： 156K
代理商： TM248NBK36B-80
TM124MBK36B, TM124MBK36R 1048576 BY 36-BIT
TM248NBK36B, TM248NBK36R 2097152 BY 36-BIT
DYNAMIC RAMMODULE
SMMS137E – JANUARY 1991 – REVISEDJUNE 1995
8
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
’248NBK36B-60
MIN
’248NBK36B-70
MIN
’248NBK36B-80
MIN
UNIT
MAX
MAX
MAX
VOH
High-level output
voltage
IOH = – 5 mA
2.4
2.4
2.4
V
VOL
Low-level output
voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current (leakage)
VCC = 5.5 V,
All other pins = 0 V to VCC
VCC = 5.5 V,
CAS high
VI = 0 V to 6.5 V,
±
20
±
20
±
20
μ
A
IO
Output current
(leakage)
VO = 0 V to VCC,
±
20
±
20
±
20
μ
A
ICC1
Read or write cycle
current (see Note 3)
VCC = 5.5 V,
Minimum cycle
963
828
738
mA
ICC2
Standby current
After 1 memory cycle,
RAS and CAS high,
VIH = 2.4 V (TTL)
After 1 memory cycle,
RAS and CAS high,
VIH = VCC – 0.2 V (CMOS)
VCC = 5.5 V,
RAS cycling,
CAS high (RAS only),
RAS low after CAS low (CBR)
VCC = 5.5 V,
RAS low, CAS cycling
36
36
36
mA
18
18
18
mA
ICC3
Average refresh current
(RAS only or CBR)
(see Note 3)
Minimum cycle,
1890
1620
1440
mA
ICC4
Average page current
(see Note 4)
tPC = minimum,
828
738
648
mA
NOTES:
3. Measured with a maximum of one address change while RAS = VIL
4. Measured with a maximum of one address change while CAS = VIH
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 5)
PARAMETER
’124MBK36B
’248NBK36B
UNIT
MIN
MAX
MIN
MAX
Ci(A)
Ci(R)
Ci(C)
Ci(W)
Co(DQ)
NOTE 5: VCC = 5 V
±
0.5 V and the bias on pins under test is 0 V.
Input capacitance, A0–A9
45
90
pF
Input capacitance, RAS
35
35
pF
Input capacitance, CAS
21
42
pF
Input capacitance, W
63
126
pF
Output capacitance on DQ pins
7
14
pF
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