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參數(shù)資料
| 型號： | TM200EZ-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER GENERAL USE INSULATED TYPE |
| 中文描述： | 大功率常規(guī)使用絕緣型 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | TM200EZ-H |
Feb.1999
00
320
40
400
160
80 120
50
100
150
200
250
300
350
200 240 280
θ
=30°
60°
90°
θ
360°
270°
DC
120°
180°
300
320
40
130
40
280
120
200
80
160
240
50
60
70
80
90
100
110
120
180°
DC
θ
=30°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
60° 90°
120°
270°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PER SINGLE
ELEMENT
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
A
D
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
C
°
C
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TM200EZ-M | HIGH POWER GENERAL USE INSULATED TYPE |
| TM200GZ-24 | HIGH POWER GENERAL USE INSULATED TYPE |
| TM200GZ-2H | HIGH POWER GENERAL USE INSULATED TYPE |
| TM200GZ-H | HIGH POWER GENERAL USE INSULATED TYPE |
| TM200GZ-M | HIGH POWER GENERAL USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TM200EZ-M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM200GZ-24 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM200GZ-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM200GZ-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM200GZ-M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
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