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參數(shù)資料
| 型號(hào)： | TM200DZ-24 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER GENERAL USE INSULATED TYPE |
| 中文描述： | 大功率常規(guī)使用絕緣型 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 60K |
| 代理商： | TM200DZ-24 |
Feb.1999
–1
10
–2
10
–3
10
0
10
0
10
1
10
4
10
3
10
2
10
1
10
–1
7
5
4
10
0
10
1
10
–1
0.5
10
2
10
1
10
0
10
70
50
30
20
7
5
3
2
0
500
4000
10
1
100
1000
1500
2000
2500
3000
3500
O
7
5
3
2
7
5
3
2
7
5
GATE CURRENT (mA)
3
2
3
2
7
5
3
2
7
5
3
2
4
V
GT
=3.0V
I
=
100mA
I
FGM
=4.0A
P
GM
=10W
V
FGM
=10V
V
GD
=0.25V
P
=
3.0W
T
j
=25°C
7
5
3
2
7
5
3
2
7
5
3
2
1.0
ON-STATE VOLTAGE (V)
2.0
2.5
1.5
T
j
=125°C
7
5
3
2
7
5
3
2
7
5
3
2
0.25
0
7
5
3
2
0.05
0.10
0.15
0.20
3
2
00
200
320
40
80
120
160
200
240
280
40
80
120
160
θ
=30°
120°
90°
180°
θ
360°
60°
130
500
120
200
40
60
70
80
90
100
110
120
80
160
θ
=30°
60°
90°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
180°
120°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PER SINGLE
ELEMENT
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
O
S
CONDUCTION TIME
(CYCLES AT 60Hz)
G
A
D
T
(
°
C
C
°
C
TIME (s)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TM200DZ-2H | HIGH POWER GENERAL USE INSULATED TYPE |
| TM200PZ-24 | HIGH POWER GENERAL USE INSULATED TYPE |
| TM200EZ-24 | HIGH POWER GENERAL USE INSULATED TYPE |
| TM200EZ-2H | HIGH POWER GENERAL USE INSULATED TYPE |
| TM200EZ-H | HIGH POWER GENERAL USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TM200DZ-2H | 制造商:Mitsubishi Electric 功能描述:THYRISTOR MODULE |
| TM200DZ-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM200DZ-M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM200EZ-24 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM200EZ-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
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