
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM150SA-6
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
6
300
360
240
300
360
240
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
μ
s
W
W
V
V
A
°
C
°
C
N·m
kg·cm
N·m
kg·cm
g
Conditions
Three-phase, half-wave, T
C
=119
°
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=150
°
C
Main terminal screw M8
Mounting screw M6
Typical value
Ratings
230
150
3000
3.8
×
10
5
100
5.0
0.5
10
5.0
2.0
–40~+150
–40~+125
8.83~10..8
90~110
1.96~2.94
20~30
250
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
—
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
μ
s
V
V
mA
°
C/W
°
C/W
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Test conditions
T
j
=150
°
C, V
RRM
applied
T
j
=150
°
C, V
DRM
applied
T
j
=150
°
C, I
TM
=450A, instantaneous meas.
T
j
=150
°
C, V
D
=2/3V
DRM
T
j
=25
°
C, V
D
=6V, R
L
=2
T
j
=150
°
C, V
D
=1/2V
DRM
T
j
=25
°
C, V
D
=6V, R
L
=2
Junction to case (per 1/3 module)
Case to fin, conductive grease applied (per 1/3 module)
Min.
—
—
—
200
—
0.25
15
—
—
Typ.
—
—
—
—
—
—
—
—
—
Max.
40
40
1.2
—
3.0
—
100
0.15
0.15