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參數(shù)資料
| 型號(hào)： | TLV2334Y |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | LinCMOSE LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS |
| 中文描述： | LinCMOSE低壓中等功率運(yùn)算放大器 |
| 文件頁數(shù)： | 2/33頁 |
| 文件大?。?/td> | 500K |
| 代理商： | TLV2334Y |
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TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS
LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
These amplifiers offer a level of ac performance greater than that of many other devices operating at
comparable power levels. The TLV233x operational amplifiers are especially well suited for use in low-current
or battery-powered applications.
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate
LinCMOS
technology. The LinCMOS process also features extremely high input impedance and ultra-low bias
currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter
applications.
To facilitate the design of small portable equipment, the TLV233x is made available in a wide range of package
options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has
significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only
1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The
TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.
TLV2332Y chip information
This chip, when properly assembled, display characteristics similar to the TLV2332. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
×
4 MILS MINIMUM
TJmax = 150
°
C
TOLERANCES ARE
±
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
–
1OUT
1IN+
1IN–
VDD
VDD–/GND
(8)
(6)
(3)
(2)
(5)
(1)
–
+
(7)
2IN+
2IN–
2OUT
(4)
59
72
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TLV2341 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LinCMOSE PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS |
| TLV2341ID | 功能描述:運(yùn)算放大器 - 運(yùn)放 Prog Med Pwr RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| TLV2341IDG4 | 功能描述:運(yùn)算放大器 - 運(yùn)放 LinCMOS Prog Low-Vltg RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| TLV2341IDR | 功能描述:運(yùn)算放大器 - 運(yùn)放 LinCMOS Prog Low-Vltg RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| TLV2341IDRG4 | 功能描述:運(yùn)算放大器 - 運(yùn)放 LinCMOS Prog Low-Vltg RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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