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參數(shù)資料
| 型號： | TLP421 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Photocoupler GaAs Ired & Photo - Transistor |
| 中文描述： | 光耦合器砷化鎵登記合格決定 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 188K |
| 代理商： | TLP421 |
TLP421
2002-09-25
4
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
= 10 mA
1.0
1.2
1.3
V
Reverse current
I
R
V
R
= 5 V
―
―
10
μA
L
Capacitance
C
T
V = 0, f = 1 MHz
―
30
―
pF
Collector emitter
breakdown voltage
V
(BR) CEO
I
C
= 0.5 mA
80
―
―
V
Emitter collector
breakdown voltage
V
(BR) ECO
I
E
= 0.1 mA
7
―
―
V
V
CE
= 24 V (ambient light
below 1000
x)
―
0.01
(0.1)
0.1
(10)
μA
Collector dark current
I
D
(I
CEO
)
V
CE
= 24 V (ambient light
Ta = 85°C
below 1000
x)
―
0.6
(1)
50
(50)
μA
D
Capacitance
(collector to emitter)
C
CE
V = 0, f = 1 MHz
―
10
―
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn
Typ.
Max
Unit
50
―
600
Current transfer ratio
I
C
/ I
F
I
F
= 5 mA, V
CE
= 5 V
Rank GB
100
―
600
%
―
60
―
Saturated CTR
I
C
/ I
F (sat)
IF = 1 mA, V
CE
= 0.4 V
Rank GB
30
―
―
%
I
C
= 2.4 mA, I
F
= 8 mA
―
―
0.4
―
0.2
―
Collector emitter saturation
voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
―
―
0.4
V
Isolation Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Capacitance
(input to output)
C
S
V
S
= 0, f = 1 MHz
―
0.8
―
pF
Isolation resistance
R
S
V
S
= 500 V
1×10
12
10
14
―
AC, 1 minute
5000
―
―
AC, 1 second, in oil
―
10000
―
V
rms
Isolation voltage
BV
S
DC, 1 minute, in oil
―
10000
―
Vdc
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