參數(shù)資料
型號(hào): TLP372
廠商: Toshiba Corporation
英文描述: TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
文件頁數(shù): 2/8頁
文件大小: 189K
代理商: TLP372
TLP371,TLP372
2002-09-25
2
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
F
60
mA
Forward current derating (Ta
39°C)
I
F
/ °C
0.7
mA / °C
Peak forward current (100μs pulse, 100pps)
I
FP
1
A
Reverse voltage
V
R
5
V
L
Junction temperature
T
j
125
°C
Collector emitter voltage
V
CEO
300
V
Collector base voltage (TLP371)
V
CBO
300
V
Emitter collector voltage
V
ECO
0.3
V
Emitter base voltage (TLP371)
V
EBO
7
V
Collector current
I
C
150
mA
Power dissipation
P
C
300
mW
Power dissipation derating (Ta
25°C)
P
C
/ °C
3.0
mW / °C
D
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Operating temperature range
T
opr
55~100
°C
Lead soldering temperature (10 s)
T
sold
260
°C
Total package power dissipation
P
T
350
mW
Total package power dissipation derating (Ta
25°C)
P
T
/ °C
3.5
mW / °C
Isolation voltage (AC, 1min., R.H.
60%)
(Note 1)
BV
S
5000
Vrms
(Note 1): Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
V
CC
200
V
Forward current
I
F
16
25
mA
Collector current
I
C
120
mA
Operating temperature
T
opr
25
85
°C
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