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參數(shù)資料
| 型號： | TLN233 |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | TOSHIBA Infrared LED GaALAs Infrared Emitter |
| 中文描述： | 東芝紅外線LED紅外線發(fā)射器的GaAIAs |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 140K |
| 代理商： | TLN233 |
TLN233
2002-01-17
2
Optical and Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
100 mA
1.6
2.0
V
Reverse current
I
R
V
R
4 V
60
A
Radiant intensity
I
E
I
F
50 mA
46
80
mW/sr
Radiant power
P
O
I
F
50 mA
30
mW
Cut-off frequency
f
c
I
F
50 mA 5 mA
P-P
(Note 3)
15
MHz
Peak emission wavelength
P
1
I
F
50 mA
870
nm
Half-angle value
2
I
F
50 mA
13
°
Note 3: Frequency when modulation light power decreases by 3dB from 1 MHz.
Handling Precautions
Soldering must be performed under the stopper.
When forming the leads, bend each lead under the 5 mm of package body. Soldering must be performed after the
leads have been formed.
The radiant intensity decrease over time due to current flowing in the infrared LED. When designing circuits,
the device must take into account the change in radiant intensity over time. The change in radiant intensity is
equal to the reciprocal of the change in LED infrared optical output.
P (0)
P (t)
I (0)
E
I
(t)
E
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