參數(shù)資料
型號(hào): TLE8264E
廠商: Infineon Technologies
文件頁(yè)數(shù): 13/16頁(yè)
文件大?。?/td> 0K
描述: IC SYSTEM BASIS CHIP DSO-36
標(biāo)準(zhǔn)包裝: 1,000
類型: 收發(fā)器
應(yīng)用: 自動(dòng)
安裝類型: 表面貼裝
封裝/外殼: 36-BSSOP(0.295",7.50mm 寬)裸露焊盤
供應(yīng)商設(shè)備封裝: PG-DSO-36
包裝: 帶卷 (TR)
其它名稱: SP000317796
ESD Robustness of TLE6251DS in comparison with the competition
ESD robustness: holding the leadership in performance and innovation
O NE OF T h E S PE CIFIC C h ALLENGE S for a transceiver device is to withstand the harsh signals that occur on
the bus, from ESD (Electro Static Discharges) to voltage peaks resulting from the parasitic inductances of bus cables. A robust
transceiver also does not need expensive external protection components such a zener diodes or varistors.
O VE r T h E P AS T y EA r S Infineon developed and improved an innovative integrated protection that enables the
dissipation of the energy, which is converted during an ESD event, through the chip from top to bottom. Silicon On Isolator (SOI)
type technologies where the active side of the chip is decoupled from its bottom by an insulator do not allow such concepts.
Infineons products can hold more than 10 kVolts of discharges using ISO 61000-4-2 test standard, an application oriented testing
method that applies an energy which is five times higher than the standard hBM (human Body Model) test that simulates typical
handling events.
6
Competition
Infineon TLE7259-2G
M
ax
imum
ESD
di
sc
har
ge
re
si
st
anc
e
at
bu
s
pin
s
(kV)
ISO 61000-4-2 150 pF / 330 T
(without bus filter)
ISO 61000-4-2 150 pF / 330 T
(with bus filter C = 3.3 nF)
+1 kV
+15 kV
+1 kV
+15 kV
Competition
Infineon TLE6251DS
M
ax
imum
ESD
di
sc
har
ge
re
si
st
anc
e
at
bu
s
pin
s
(kV)
ISO 61000-4-2 150 pF / 330 T
ISO 61000-4-2 150 pF / 2 kT
+2 kV
+10 kV
+1,5 kV
+13 kV
ESD Robustness of TLE7259-2G in comparison with the competition
08-01-16 RZ Transceiver Gesamt.indd 6
16.01.2008 12:23:30 Uhr
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TLE8263E IC SYSTEM BASIS CHIP DSO-36
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TLE8261E IC SYSTEM BASIS CHIP DSO-36
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