參數(shù)資料
型號： TLC5510INSG4
廠商： TEXAS INSTRUMENTS INC
元件分類： ADC
英文描述： 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDSO24
封裝： PLASTIC, SOP-24
文件頁數(shù)： 16/21頁
文件大?。?/td> 319K
代理商： TLC5510INSG4
TLC5510, TLC5510A
8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTERS
SLAS095K – SEPTEMBER 1994 – REVISED MAY 1999
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at VDD = 5 V, VREFT = 2.5 V, VREFB = 0.5 V, f(CLK) = 20 MHz, TA = 25°C (unless
otherwise noted)
digital I/O
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IIH
High-level input current
VDD = MAX,
VIH = VDD
5
A
IIL
Low-level input current
VDD = MAX,
VIL = 0
5
A
IOH
High-level output current
OE = GND,
VDD = MIN,
VOH = VDD – 0.5 V
– 1.5
mA
IOL
Low-level output current
OE = GND,
VDD = MIN,
VOL = 0.4 V
2.5
mA
IOZH
High-level high-impedance-state
output leakage current
OE = VDD,
VDD = MAX
VOH = VDD
16
A
IOZL
Low-level high-impedance-state
output leakage current
OE = VDD,
VDD = MIN
VOL = 0
16
A
Conditions marked MIN or MAX are as stated in recommended operating conditions.
power
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDD
Supply current
f(CLK) = 20 MHz, National Television System Committee (NTSC)
ramp wave input, reference resistor dissipation is separate
18
27
mA
I f
Reference voltage current
TLC5510
Vref = REFT – REFB = 2 V
5.2
7.5
10.5
mA
Iref
Reference voltage current
TLC5510A
Vref = REFT – REFB = 4 V
10.4
15
21
mA
Conditions marked MIN or MAX are as stated in recommended operating conditions.
static performance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Self-bias (1), at REFB
Short REFB to REFBS
Short REFT to REFTS
0.57
0.61
0.65
Self-bias (2), REFT – REFB
Short REFB to REFBS,
Short REFT to REFTS
1.9
2.02
2.15
V
Self-bias (3), at REFT
Short REFB to AGND,
Short REFT to REFTS
2.18
2.29
2.4
Rref
Reference voltage resistor
Between REFT and REFB
190
270
350
Ci
Analog input capacitance
VI(ANLG) = 1.5 V + 0.07 Vrms
16
pF
TLC5510
f(CLK) = 20 MHz,
TA = 25°C
±0.4 ±0.75
Integral nonlinearity (INL)
TLC5510
(CLK)
,
VI = 0.5 V to 2.5 V
TA = – 20°C to 75°C
±1
Integral nonlinearity (INL)
TLC5510A
f(CLK) = 20 MHz,
TA = 25°C
±0.4 ±0.75
TLC5510A
(CLK)
,
VI = 0 to 4 V
TA = – 20°C to 75°C
±1
LSB
TLC5510
f(CLK) = 20 MHz,
TA = 25°C
±0.3
±0.5
LSB
Differential nonlinearity (DNL)
TLC5510
(CLK)
,
VI = 0.5 V to 2.5 V
TA = – 20°C to 75°C
±0.75
Differential nonlinearity (DNL)
TLC5510A
f(CLK) = 20 MHz,
TA = 25°C
±0.3
±0.5
TLC5510A
(CLK)
,
VI = 0 to 4 V
TA = – 20°C to 75°C
±0.75
EZS
Zero scale error
TLC5510
Vref = REFT – REFB = 2 V
–18
–43
–68
mV
EZS
Zero-scale error
TLC5510A
Vref= REFT – REFB = 4 V
–36
–86
– 136
mV
EFS
Full-scale error
TLC5510
Vref = REFT – REFB = 2 V
–20
0
20
mV
EFS
Full-scale error
TLC5510A
Vref = REFT – REFB = 4 V
–40
0
40
mV
Conditions marked MIN or MAX are as stated in recommended operating conditions.
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TLC5510INSR-A 制造商:Rochester Electronics LLC 功能描述:- Bulk
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