參數(shù)資料
型號(hào): TLC271BCPSRG4
廠商: Texas Instruments, Inc.
英文描述: LinCMOSE PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS
中文描述: LinCMOSE可編程低功耗運(yùn)算放大器
文件頁數(shù): 2/82頁
文件大?。?/td> 1362K
代理商: TLC271BCPSRG4
TLC271, TLC271A, TLC271B
LinCMOS
PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D
NOVEMBER 1987
REVISED MARCH 2001
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
DEVICE FEATURES
PARAMETER
BIAS-SELECT MODE
UNIT
HIGH
3375
3.6
MEDIUM
525
0.4
32
0.5
170
LOW
50
0.03
68
0.09
480
PD
SR
Vn
B1
AVD
μ
W
V/
μ
s
nV/
Hz
MHz
V/mV
25
1.7
23
Typical at VDD = 5 V, TA = 25
°
C
description (continued)
Using the bias-select option, these cost-effective devices can be programmed to span a wide range of
applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are
available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV)
low-offset version. The extremely high input impedance and low bias currents, in conjunction with good
common-mode rejection and supply voltage rejection, make these devices a good choice for new
state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS
operational amplifiers,
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The
devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and
inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and output are designed to withstand
100-mA surge currents without sustaining latch-up.
The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000
V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices
as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0
°
C to 70
°
C. The I-suffix devices are characterized
for operation from
40
°
C to 85
°
C. The M-suffix devices are characterized for operation over the full military
temperature range of
55
°
C to 125
°
C.
bias-select feature
The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending
on the level of performance desired. The tradeoffs between bias levels involve ac performance and power
dissipation (see Table 1).
Table 1. Effect of Bias Selection on Performance
TYPICAL PARAMETER VALUES
TA= 25
°
C, VDD= 5 V
TA = 25 C, VDD = 5 V
MODE
HIGH BIAS
RL = 10 k
3.4
3.6
25
1.7
46
°
23
MEDIUM BIAS
RL = 100 k
0.5
0.4
32
0.5
40
°
170
LOW BIAS
RL = 1 M
0.05
0.03
68
0.09
34
°
480
UNIT
PD
SR
Vn
B1
φ
m
AVD
Power dissipation
Slew rate
Equivalent input noise voltage at f = 1 kHz
Unity-gain bandwidth
Phase margin
Large-signal differential voltage amplification
mW
V/
μ
s
nV/
Hz
MHz
V/mV
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