參數(shù)資料
型號: TL431B
廠商: ON SEMICONDUCTOR
英文描述: Programmable Precision References(可編程精密基準(zhǔn))
中文描述: 可編程精密參考(可編程精密基準(zhǔn))
文件頁數(shù): 2/19頁
文件大?。?/td> 176K
代理商: TL431B
TL431, A, B Series, NCV431A
http://onsemi.com
2
Representative Block Diagram
1.0 k
Cathode
(K)
2.5 V
ref
Anode (A)
Reference
(R)
4.0 k
150
Symbol
10 k
20 pF
800
Cathode (K)
3.28 k
Representative Schematic Diagram
Component values are nominal
Anode (A)
+
Anode
(A)
800
Reference
(R)
2.4 k
7.2 k
20 pF
800
Cathode
(K)
Reference
(R)
This device contains 12 active transistors.
MAXIMUM RATINGS
(Full operating ambient temperature range applies, unless otherwise noted.)
Rating
Symbol
Value
Unit
Cathode to Anode Voltage
V
KA
37
V
Cathode Current Range, Continuous
I
K
100 to +150
mA
Reference Input Current Range, Continuous
I
ref
0.05 to +10
mA
Operating Junction Temperature
T
J
150
°
C
Operating Ambient Temperature Range
TL431I, TL431AI, TL431BI
TL431C, TL431AC, TL431BC
NCV431AI, TL431BV
T
A
°
C
40 to +85
0 to +70
40 to +125
Storage Temperature Range
T
stg
65 to +150
°
C
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C Ambient Temperature
D, LP Suffix Plastic Package
P Suffix Plastic Package
DM Suffix Plastic Package
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C Case Temperature
D, LP Suffix Plastic Package
P Suffix Plastic Package
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
P
D
W
0.70
1.10
0.52
P
D
W
1.5
3.0
NOTE:
ESD data available upon request.
RECOMMENDED OPERATING CONDITIONS
Condition
Symbol
Min
Max
Unit
Cathode to Anode Voltage
V
KA
V
ref
36
V
Cathode Current
I
K
1.0
100
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
D, LP Suffix
Package
P Suffix
Package
DM Suffix
Package
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
178
114
240
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
83
41
°
C/W
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