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參數(shù)資料
| 型號： | TL3500H |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | 400 V, 50 A, SILICON SURGE PROTECTOR, DO-201AD |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | TL3500H |
SYMBOL
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
PARAMETER
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Holding current
Note: 1
I
H
V
T
I
PP
C
O
On state voltage
Peak pulse current
Off state capacitance
Note: 2
Breakover current
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
V
I
NOTES: 1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the T
SPD
Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0V
RMS
signal; VR=2V
DC
bias.
TL0640H
TL0720H
75
58
65
TL0900H
TL1100H
TL1300H
TL1500H
TL1800H
TL2300H
TL2600H
TL3100H
TL3500H
140
90
120
220
160
190
275
320
5
5
5
5
5
5
5
5
5
5
5
98
77
88
180
130
160
300
220
265
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
150
150
150
150
150
150
150
150
150
150
150
200
200
200
120
120
120
80
120
80
80
80
50
50
50
50
50
50
50
50
50
50
50
Max
PARAMETER
SYMBOL
UNITS
LIMIT
RATED
REPETITIVE
OFF-STATE
VOLTAGE
OFF-STATE
LEAKAGE
CURRENT
@ V
DRM
BREAKOVER
VOLTAGE
ON-STATE
VOLTAGE
@ I
T
=1.0A
HOLDING
CURRENT
OFF-STATE
CAPACITANCE
Max
Max
Max
Min
Max
Min
Typ
V
DRM
I
DRM
V
BO
V
T
I
BO
-
I
BO+
I
H-
Co
Volts
uA
Volts
Volts
mA
mA
mA
pF
ELECTRICAL CHARACTERISTICS
@ T
A=
25
TL0640H thru TL3500H
℃
unless otherwise specified
BREAKOVER
CURRENT
800
800
800
800
800
800
800
800
800
800
800
Max
I
H+
mA
800
800
800
800
800
800
800
800
800
800
800
REV. 0, 03-Dec-2001, KDWE01
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