參數(shù)資料
型號(hào): TL052AMD
廠商: Texas Instruments, Inc.
英文描述: Electrical Duct/Raceway Fitting;
中文描述: 增強(qiáng)型場(chǎng)效應(yīng)低失調(diào)運(yùn)算放大器
文件頁(yè)數(shù): 32/65頁(yè)
文件大?。?/td> 1022K
代理商: TL052AMD
TL05x, TL05xA, TL05xY
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178 – FEBRUARY 1997
32
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
+
VCC+
VCC–
VI
VO
RL
NOTE A: CL includes fixture capacitance.
. Slew Rate, Rise/Fall Time,
Figure 1
CL
(see Note A)
and Overshoot Test Circuit
Overshoot
10%
90%
tr
Waveform
. Rise Time and Overshoot
Figure 2
VCC–
RS
VCC+
+
VO
RS
2 k
. Noise-Voltage Test Circuit
Figure 3
Figure 4
VO
VCC–
VCC+
+
RL
CL
(see Note A)
VI
10 k
100
NOTE A: CL includes fixture capacitance.
. Unity-Gain Bandwidth and
Phase-Margin Test Circuit
typical values
Typical values as presented in this data sheet
represent the median (50% point) of device
parametric performance.
input bias and offset current
At the picoamp-bias-current level typical of the
TL05x and TL05xA, accurate measurement of the
bias current becomes difficult. Not only does this
measurement require a picoammeter, but test
socket leakages can easily exceed the actualdevice bias currents. To accurately measure these small currents,
Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters with bias
voltages applied but with no device in the socket. The device is then inserted in the socket, and a second test
that measures both the socket leakage and the device input bias current is performed. The two measurements
are then subtracted algebraically to determine the bias current of the device.
noise
Because of the increasing emphasis on low noise levels in many of today’s applications, the input noise voltage
density is sample tested at f = 1 kHz. Texas Instruments also has additional noise testing capability to meet
specific application requirements. Please contact the factory for details.
Figure 5. Input-Bias and Offset-Current Test Circuit
+
VCC+
VCC–
Ground Shield
pA
pA
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