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      參數(shù)資料
      型號(hào): TISP7150F3DR
      廠商: POWER INNOVATIONS LTD
      元件分類: 浪涌電流限制器
      英文描述: MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
      中文描述: SILICON SURGE PROTECTOR, MS-012
      封裝: PLASTIC, SO-8
      文件頁(yè)數(shù): 3/19頁(yè)
      文件大小: 562K
      代理商: TISP7150F3DR
      MARCH 1994 - REVISED MARCH 2006
      Specifications are subject to change without notice.
      Customers should verify actual device performance in their specific applications.
      Electrical Characteristics for all Terminal Pairs, TA = 25
      °
      C (Unless Otherwise Noted)
      Parameter
      Repetitive peak off-
      state current
      Test Conditions
      Min
      Typ
      Max
      Unit
      I
      DRM
      V
      D
      = V
      DRM
      , 0
      °
      C < T
      A
      < 70
      °
      C
      ±
      10
      μ
      A
      V
      (BO)
      Breakover voltage
      dv/dt =
      ±
      250 V/ms,
      R
      SOURCE
      = 300
      ‘7125F3
      ‘7150F3
      ‘7180F3
      ‘7240F3
      ‘7260F3
      ‘7290F3
      ‘7320F3
      ‘7350F3
      ‘7380F3
      ‘7125F3
      ‘7150F3
      ‘7180F3
      ‘7240F3
      ‘7260F3
      ‘7290F3
      ‘7320F3
      ‘7350F3
      ‘7380F3
      ±
      125
      ±
      150
      ±
      180
      ±
      240
      ±
      260
      ±
      290
      ±
      320
      ±
      350
      ±
      380
      ±
      143
      ±
      168
      ±
      198
      ±
      269
      ±
      289
      ±
      319
      ±
      349
      ±
      379
      ±
      409
      ±
      0.8
      ±
      5
      V
      V
      (BO)
      Impulse breakover
      voltage
      dv/dt
      ±
      1000 V/
      μ
      s, Linear voltage ramp,
      Maximum ramp value =
      ±
      500 V
      di/dt =
      ±
      20 A/
      μ
      s, Linear current ramp,
      Maximum ramp value =
      ±
      10 A
      V
      I
      (BO)
      V
      T
      I
      H
      Breakover current
      On-state voltage
      Holding current
      Critical rate of rise of
      off-state voltage
      Off-state current
      dv/dt =
      ±
      250 V/ms,
      I
      T
      =
      ±
      5 A, t
      W
      = 100
      μ
      s
      I
      T
      =
      ±
      5 A, di/dt = - /+30 mA/ms
      R
      SOURCE
      = 300
      ±
      0.1
      A
      V
      A
      ±
      0.15
      dv/dt
      Linear voltage ramp, Maximum ramp value < 0.85V
      DRM
      ±
      5
      kV/
      μ
      s
      I
      D
      V
      D
      =
      ±
      50 V
      f = 1 MHz,
      ±
      10
      48
      41
      52
      44
      47
      39
      40
      31
      23
      17
      18
      13
      27
      23
      μ
      A
      C
      off
      Off-state capacitance
      V
      d
      = 1 V rms, V
      D
      = 0
      f = 1 MHz,
      V
      d
      = 1 V rms, V
      D
      = -1 V
      f = 1 MHz,
      V
      d
      = 1 V rms, V
      D
      = -2 V
      f = 1 MHz,
      V
      d
      = 1 V rms, V
      D
      = -5 V
      f = 1 MHz,
      V
      d
      = 1 V rms, V
      D
      = -50 V
      f = 1 MHz,
      V
      d
      = 1 V rms, V
      D
      = -100 V
      f = 1 MHz,
      (see Note 4)
      V
      d
      = 1 V rms, V
      DTR
      = 0
      ‘7125 thru ‘7180
      ‘7240 thru ‘7380
      ‘7125 thru ‘7180
      ‘7240 thru ‘7380
      ‘7125 thru ‘7180
      ‘7240 thru ‘7380
      ‘7125 thru ‘7180
      ‘7240 thru ‘7380
      ‘7125 thru ‘7180
      ‘7240 thru ‘7380
      ‘7125 thru ‘7180
      ‘7240 thru ‘7380
      ‘7125 thru ‘7180
      ‘7240 thru ‘7380
      37
      31
      40
      34
      36
      30
      31
      24
      17
      13
      14
      10
      20
      17
      pF
      NOTE
      4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias V
      D
      , are
      for the R-G and T-G terminals only. The last capacitance value, with bias V
      DTR
      , is for the T-R terminals.
      Thermal Characteristics
      TISP7xxxF3 (MV, HV) Overvoltage Protector Series
      Parameter
      Test Conditions
      Min
      Typ
      Max
      160
      Unit
      R
      θ
      JA
      Junction to free air thermal resistance
      P
      tot
      = 0.8 W, T
      A
      = 25
      °
      C
      5 cm
      2
      , FR4 PCB
      D Package
      °
      C/W
      SL Package
      135
      相關(guān)PDF資料
      PDF描述
      TISP7150F3DR-S MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
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      相關(guān)代理商/技術(shù)參數(shù)
      參數(shù)描述
      TISP7150F3DR-S 功能描述:硅對(duì)稱二端開關(guān)元件 Triple Element Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
      TISP7150F3D-S 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
      TISP7150F3P 功能描述:硅對(duì)稱二端開關(guān)元件 Triple Element Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
      TISP7150F3PS 制造商:Bourns Inc 功能描述:
      TISP7150F3P-S 功能描述:硅對(duì)稱二端開關(guān)元件 Triple Element Bidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA