參數(shù)資料
型號: TISP61CAP3
廠商: Power Innovations International, Inc.
英文描述: PROGRAMMABLE OVERVOLTAGE PROTECTOR
中文描述: 可編程過壓保護
文件頁數(shù): 2/5頁
文件大?。?/td> 89K
代理商: TISP61CAP3
TISP61CAP3
PROGRAMMABLE
OVERVOLTAGE PROTECTOR
SEPTEMBER 1994 - REVISED SEPTEMBER 1997
2
P R O D U C T I N F O R M A T I O N
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
electrical characteristics, T
J
= 25°C
PARAMETER
Forward voltage
Forward recovery
voltage
Gate cathode voltage
at breakover
(V
(BO)
- V
GG
)
Impulse gate cathode
voltage at breakover
(V
(BO)
- V
GG
)
On-state voltage
Off-state current
Switching current
Holding current
Gate reverse current
with cathode open
Gate reverse current
in the on-state
Gate reverse current
in the forward
conducting state
Peak gate switching
current
TEST CONDITIONS
MIN
TYP
MAX
3
UNIT
V
V
F
I
F
= 5 A
V
FR
dv/dt = 300 V/
μ
s
di/dt < 10 A/
μ
s
R
SOURCE
= 30
7
V
V
GK(BO)
dv/dt = -250 V/ms
-72 < V
GG
< -10 V
R
SOURCE
= 300
-3
V
V
GK(BO)
dv/dt = -300 V/
μ
s
di/dt < -10 A/
μ
s
-72 < V
GG
< -10 V
R
SOURCE
= 30
-15
V
V
T
I
D
I
S
I
H
I
T
= -4 A
V
D
= -80 V
dv/dt = -250 V/ms
di/dt = 30 mA/
μ
s
-72 < V
GG
< -10 V
V
GG
= -80 V
-72 < V
GG
< -10 V
-72 < V
GG
< -10 V
-3
-10
V
μ
A
A
A
R
SOURCE
= 300
-0.15
-0.15
I
GAO
V
GG
= -72 V
-10
μ
A
I
GAT
V
GG
= -72 V
I
T
= -0.5 A
-1
mA
I
GAF
V
GG
= -72 V
I
T
= 1 A
I
T
= 5 A
-10
-30
mA
I
GSM
dv/dt = -250 V/ms
-72 < V
GG
< -10 V
R
SOURCE
= 300
5
mA
C
off
Off-state capacitance
-72 < V
GG
< -10 V
V
D
= -3 V
V
D
= -48 V
(see Note 4)
150
80
pF
dv/dt
Critical rate of rise of
off-state voltage
V
GG
= -72 V, linear ramp, Maximum ramp value > 0.85 V
GG
-50
V/
μ
s
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