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參數(shù)資料
| 型號(hào)： | TISP61511DR-S |
| 廠商： | BOURNS INC |
| 元件分類： | 保護(hù)電路 |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 360K |
| 代理商： | TISP61511DR-S |
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Recommended Operating Conditions
TISP61511D Gated Protectors
Absolute Maximum Ratings
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, V
GK
= 0, -40
°
C
≤
T
J
≤
85
°
C
Repetitive peak gate-cathode voltage, V
KA
= 0, -40
°
C
≤
T
J
≤
85
°
C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
V
DRM
V
GKRM
-100
V
-85
V
I
TSP
A
10/1000
μ
s
5/310
μ
s
0.2/310
μ
s
1/20
μ
s
2/10
μ
s
T
J
= -40
°
C
T
J
= 25
°
C, 85
°
C
30
40
40
90
120
170
Non-repetitive peak on-state current, 50 Hz (see Notes 1 and 2)
I
TSM
A
full-sine-wave, 20 ms
5
1 s
3.5
Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2)
I
GSM
T
J
T
stg
2
A
Junction temperature
-55 to +150
°
C
Storage temperature range
-55 to +150
°
C
NOTES: 1. Initially the protector must be in thermal equilibrium with -40
°
C
≤
T
J
≤
85
°
C. The surge may be repeated after the device returns
to its initial conditions. See the applications section for the details of the impulse generators.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice
the rated current value of an individual terminal pair). Above 85
°
C, derate linearly to zero at 150
°
C lead temperature.
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted)
Component
Min
Typ
Max
Unit
C
G
Gate decoupling capacitor
220
nF
Parameter
Test Conditions
Min
Typ
Max
Unit
I
D
Off-state current
V
D
= -85 V, V
GK
= 0
T
J
= 25
°
C
T
J
= 70
°
C
5
μ
A
50
μ
A
V
(BO)
Breakover voltage
I
T
= 30 A, 10/1000
μ
s, 1 kV, R
S
= 33
, di/dt
(i)
= 8 A/
μ
s (see Note 3)
I
T
= 30 A, 10/700
μ
s, 1.5 kV, R
S
= 10
, di/dt
(i)
= 14 A/
μ
s (see Note 3)
I
T
= 30 A, 1.2/50
μ
s, 1.5 kV, R
S
= 10
, di/dt
(i)
= 70 A/
μ
s (see Note 3)
I
T
= 38 A, 2/10
μ
s, 2.5 kV, R
S
= 61
, di/dt
(i)
= 40 A/
μ
s (see Note 3)
I
T
= 0.5 A, t
w
= 500
μ
s
I
T
= 3 A, t
w
= 500
μ
s
I
F
= 5 A, t
w
= 500
μ
s
I
F
= 30 A, 10/1000
μ
s, 1 kV, R
S
= 33
, di/dt
(i)
= 8 A/
μ
s (see Note 3)
I
T
= 30 A, 10/700
μ
s, 1.5 kV, R
S
= 10
, di/dt
(i)
= 14 A/
μ
s (see Note 3)
I
T
= 30 A, 1.2/50
μ
s, 1.5 kV, R
S
= 10
, di/dt
(i)
= 70 A/
μ
s (see Note 3)
I
T
= 38 A, 2/10
μ
s, 2.5 kV, R
S
= 61
, di/dt
(i)
= 40 A/
μ
s (see Note 3)
-58
V
V
GK(BO)
Gate-cathode voltage
at breakover
10
20
25
V
V
T
On-state voltage
3
4
V
V
F
Forward voltage
3
V
V
FRM
Peak forward recovery
voltage
5
5
7
12
V
NOTE
3: All tests have C
G
= 220 nF and V
GG
= -48 V. R
S
is the current limiting resistor between the output of the impulse generator and
the R or T terminal. See the applications section for the details of the impulse generators.
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| TISP61511DS | 制造商:Bourns Inc 功能描述: |
| TISP61511D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61512P | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61512PS | 制造商:Bourns Inc 功能描述: |
| TISP61512P-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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