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參數(shù)資料
| 型號： | TISP61089SDR |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠(yuǎn)期導(dǎo)電的P -可編程門晶閘管過壓保護 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大小： | 284K |
| 代理商： | TISP61089SDR |
P R O D U C T I N F O R M A T I O N
3
JULY 1999
TISP61089S
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
electrical characteristics, T
J
= 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
D
Off-state current
V
D
= V
DRM
, I
G
= 0
T
J
= 25°C
T
J
= 85°C
-5
μA
-50
μA
V
(BO)
Breakover voltage
2/10 μs, I
T
= -56 A, R
S
= 45
,
V
GG
= -48 V, C
G
= 220 nF
2/10 μs, I
T
= -100 A, R
S
= 50
,
V
GG
= -48 V, C
G
= 220 nF
1.2/50 μs, I
T
= -53 A, R
S
= 47
,
V
GG
= -48 V, C
G
= 220 nF
1.2/50 μs, I
T
= -96 A, R
S
= 52
,
V
GG
= -48 V, C
G
= 220 nF
I
F
= 5 A, t
w
= 200 μs
2/10 μs, I
F
= 56 A, R
S
= 45
,
V
GG
= -48 V, C
G
= 220 nF
2/10 μs, I
F
= 100 A, R
S
= 50
,
V
GG
= -48 V, C
G
= 220 nF
1.2/50 μs, I
F
= 53 A, R
S
= 47
,
V
GG
= -48 V, C
G
= 220 nF
1.2/50 μs, I
F
= 96 A, R
S
= 52
,
V
GG
= -48 V, C
G
= 220 nF
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -48 V
-57
-60
-60
-64
V
V
F
Forward voltage
3
V
V
FRM
Peak forward recovery
voltage
6
8
8
12
V
I
H
Holding current
-150
mA
I
GKS
Gate reverse current
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
T
J
= 25°C
T
J
= 85°C
-5
μA
-50
μA
I
GT
V
GT
Q
GS
Gate trigger current
I
T
= 3 A, t
p(g)
≥
20 μs, V
GG
= -48 V
I
T
= 3 A, t
p(g)
≥
20 μs, V
GG
= -48 V
1.2/50 μs, I
T
= 53 A, R
S
= 47
, V
GG
= -48 V C
G
= 220 nF
5
mA
Gate trigger voltage
2.5
V
Gate switching charge
0.1
μC
C
AK
Anode-cathode off-
state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 3)
V
D
= -3 V
V
D
= -48 V
100
pF
50
pF
NOTE
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
θ
JA
Junction to free air thermal resistance
T
A
= 25 °C, EIA/JESD51-3 PCB,
EIA/JESD51-2 environment, I
T
= I
TSM(900)
105
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP61089S | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SD | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089 | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089AS | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61089SDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DS | 制造商:Bourns Inc 功能描述: |
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