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參數(shù)資料
| 型號： | TISP61089S |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠期導電的P -可編程門晶閘管過壓保護 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 284K |
| 代理商： | TISP61089S |
P R O D U C T I N F O R M A T I O N
13
JULY 1999
TISP61089S
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
after the test has ended. The test current levels and their duration are shown in Figure 8. First level tests have
a high source resistance and the current levels are not strongly dependent on the TISP61089S series resistor
value.
Second level tests have a low source resistance and the current levels are dependent on the TISP61089S
series resistor value. The two stepped lines at the top of Figure 8 are for the 25
and 40
series resistor
cases. If the full current-time durations occur the equipment will fail the wiring simulator test. The MDQ 1-6/
10A fusing characteristic is also shown in Figure 8. The TISP61089S series overcurrent protection must
operate before the MDQ 1-6/10A fuses, so this represents another boundary condition in the selection of the
overcurrent protector.
Figure 8. ‘1089 MAXIMUM TEST CURRENT LEVEL
Figure 9 summarises these boundary conditions. The highest current levels that can flow are influenced by
the TISP61089S series resistance. After one second the maximum current-time boundary becomes set by
the MDQ 1-6/10A fusing characteristic. Fusible overcurrent protectors cannot operate at first level current
levels.
Figure 9 shows two other curves. The lower one is the TISP61089S rated current. The overcurrent protector
should not allow current-time durations greater than this otherwise the TISP61089S may fail. If second level
failure is acceptable then the overcurrent protector must operate before the TISP61089S package limit is
reached.
The TISP61089S a.c. ratings are worse case values when the device is mounted on the minimal sized PCB
used for measuring thermal resistance. Typical PCBs would give a 25% increase in the rated currents for
periods above 0.1 s.
MAXIMUM RMS CURRENT
vs
TIME
Time - s
0.01
0.1
1
10
100
1000
M
0.1
0.2
0.3
0.5
0.7
1
2
3
5
7
10
20
30
First Level Tests - 25 & 40
MDQ 1-6/10A Fuse
Second Level Tests - 40
Second Level Tests - 25
AI6XAK
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61089SD | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SDR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089SDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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