參數(shù)資料
    型號: TISP5190H3BJR
    廠商: BOURNS INC
    元件分類: 浪涌電流限制器
    英文描述: FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
    中文描述: 190 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
    封裝: SMB, 2 PIN
    文件頁數(shù): 2/11頁
    文件大?。?/td> 286K
    代理商: TISP5190H3BJR
    Specifications are subject to change without notice.
    Customers should verify actual device performance in their specific applications.
    JANUARY 1998 - REVISED FEBRUARY 2005
    Absolute Maximum Ratings, TA = 25
    °
    C (Unless Otherwise Noted)
    Electrical Characteristics, TA = 25
    °
    C (Unless Otherwise Noted)
    Parameter
    TISP5xxxH3BJ Overvoltage Protection Series
    Rating
    Symbol
    Value
    -58
    -65
    -75
    -80
    -90
    -120
    -160
    Unit
    Repetitive peak off-state voltage (see Note 1)
    '5070H3BJ
    '5080H3BJ
    '5095H3BJ
    '5110H3BJ
    '5115H3BJ
    '5150H3BJ
    '5190H3BJ
    V
    DRM
    V
    Non-repetitive peak impulse current (see Notes 2, 3 and 4)
    2/10
    μ
    s (GR-1089-CORE, 2/10
    μ
    s voltage wave shape)
    8/20
    μ
    s (IEC 61000-4-5, 1.2/50
    μ
    s voltage, 8/20
    μ
    s current combination wave generator)
    10/160
    μ
    s (TIA-968-A, 10/160
    μ
    s voltage wave shape)
    5/200
    μ
    s (VDE 0433, 10/700
    μ
    s voltage waveshape)
    0.2/310
    μ
    s (I3124, 0.5/700
    μ
    s waveshape)
    5/310
    μ
    s (ITU-T K.44, 10/700
    μ
    s voltage waveshape used in K.20/21/45)
    5/310
    μ
    s (FTZ R12, 10/700
    μ
    s voltage waveshape)
    10/560
    μ
    s (TIA-968-A, 10/560
    μ
    s voltage wave shape)
    10/1000
    μ
    s (GR-1089-CORE, 10/1000
    μ
    s voltage wave shape)
    Non-repetitive peak on-state current (see Notes 2, 3 and 5)
    20 ms, 50 Hz (full sine wave)
    16.7 ms, 60 Hz (full sine wave)
    1000 s 50 Hz/60 Hz a.c.
    Initial rate of rise of on-state current, GR-1089-CORE 2/10
    μ
    s wave shape
    Junction temperature
    Storage temperature range
    I
    PPSM
    ±
    500
    ±
    300
    ±
    250
    ±
    220
    ±
    200
    ±
    200
    ±
    200
    ±
    160
    ±
    100
    A
    I
    TSM
    55
    60
    2.1
    ±
    400
    A
    di
    T
    /dt
    T
    J
    T
    stg
    A/
    μ
    s
    °
    C
    °
    C
    -40 to +150
    -65 to +150
    NOTES: 1. See Figure 9 for voltage values at lower temperatures.
    2. Initially the device must be in thermal equilibrium with T
    J
    = 25
    °
    C.
    3. The surge may be repeated after the device returns to its initial condtions.
    4. See Figure 10 for current ratings at other temperatures.
    5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
    track widths. Derate current values at -0.61%/
    °
    C for ambient temperatures above 25
    °
    C. See Figure 8 for current ratings at other
    durations.
    Test Conditions
    Min Typ Max
    Unit
    I
    DRM
    Repetitive peak off-state current
    V
    D
    = V
    DRM
    T
    A
    = 25
    °
    C
    T
    A
    = 85
    °
    C
    '5070H3BJ
    '5080H3BJ
    '5095H3BJ
    '5110H3BJ
    '5115H3BJ
    '5150H3BJ
    '5190H3BJ
    '5070H3BJ
    '5080H3BJ
    '5095H3BJ
    '5110H3BJ
    '5115H3BJ
    '5150H3BJ
    '5190H3BJ
    -5
    -10
    -70
    -80
    -95
    -110
    -115
    -150
    -190
    -80
    -90
    -105
    -120
    -125
    -160
    -200
    μ
    A
    V
    (BO)
    Breakover voltage
    dv/dt = -250 V/ms, R
    SOURCE
    = 300
    V
    V
    (BO)
    Impulse breakover voltage
    dv/dt
    -1000 V/
    μ
    s, Linear voltage ramp,
    Maximum ramp value = -500 V
    di/dt = -20 A/
    μ
    s, Linear current ramp,
    Maximum ramp value = -10 A
    V
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