參數(shù)資料
型號(hào)： TISP4XXXM3LM
廠商： Bourns Inc.
英文描述： BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述： 雙向可控硅過(guò)電壓保護(hù)器
文件頁(yè)數(shù)： 11/16頁(yè)
文件大?。?/td> 454K
代理商： TISP4XXXM3LM
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
AC Power Testing
TISP4xxxM3LM Overvoltage Protector Series
Capacitance
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the
ring trip circuit.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for
packages smaller than 27 mm (1.06 ’’) on a side and the other for packages up to 48 mm (1.89 ’’). The LM package measurements used the
smaller 76.2 mm x 114.3 mm (3.0 ’’ x 4.5 ’’) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal
resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance
and so can dissipate higher power levels than indicated by the JESD51 values.
APPLICATIONS INFORMATION
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be
terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent
protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere.
In some cases, it may be necessary to add some extra series resistance to prevent the fuse from opening during impulse testing. The current
versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases there may be a further time
limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible,
values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in
Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about
-2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
Figure 10 allows the calculation of the protector VDRM value at temperatures below 25
°
C. The calculated value should not be less than the
maximum normal system voltages. The TISP4260M3LM, with a VDRM of 200 V, can be used for the protection of ring generators producing
100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However,
this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an
unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature
when the VDRM has reduced to 190/200 = 0.95 of its 25
°
C value. Figure 10 shows that this condition will occur at an ambient temperature of
-28
°
C. In this example, the TISP4260M3LM will allow normal equipment operation provided that the minimum expected ambient temperature
does not fall below -28
°
C.
相關(guān)PDF資料
PDF描述
TISP4400H3 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4XXXH3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4A270H3BJ LCAS R LINE Protector
TISP4C125H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4C145H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP5070H3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP5070H3BJR 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP5070H3BJR-S 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP5080H3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP5080H3BJR 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*