參數(shù)資料
型號: TISP4XXXM3BJ
廠商: Bourns Inc.
英文描述: BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述: 雙向可控硅過電壓保護(hù)器
文件頁數(shù): 3/15頁
文件大小: 398K
代理商: TISP4XXXM3BJ
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
The TISP4xxxM3BJ range consists of nineteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection
devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative
voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000
TISP4xxxH3BJ series is available.
TISP4xxxM3BJ Overvoltage Protector Series
Description (continued)
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Rating
Symbol
Value
±
58
±
65
±
75
±
90
±
100
±
120
±
135
±
145
±
155
±
160
±
180
±
190
±
200
±
220
±
230
±
275
±
290
±
320
±
300
Unit
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4360
‘4395
‘4400
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10
μ
s (GR-1089-CORE, 2/10
μ
s voltage wave shape)
8/20
μ
s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160
μ
s (FCC Part 68, 10/160
μ
s voltage wave shape)
5/200
μ
s (VDE 0433, 10/700
μ
s voltage wave shape)
0.2/310
μ
s (I3124, 0.5/700
μ
s voltage wave shape)
5/310
μ
s (ITU-T K.20/21/45, K.44 10/700
μ
s voltage wave shape)
5/310
μ
s (FTZ R12, 10/700
μ
s voltage wave shape)
10/560
μ
s (FCC Part 68, 10/560
μ
s voltage wave shape)
10/1000
μ
s (GR-1089-CORE, 10/1000
μ
s voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 100 A
Junction temperature
Storage temperature range
NOTES: 1. See Applications Information and Figure 11 for voltage values at lower temperatures.
2. Initially, heTISP4xxxM3BJ must be in thermal equilibrium with T
J
= 25
°
C.
3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.
4. See Applications Information and Figure 12 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/
°
C for ambient temperatures
above 25
°
C.
I
TSP
A
300
220
120
110
100
100
100
75
50
I
TSM
30
32
2.1
300
A
di
T
/dt
T
J
T
stg
A/
μ
s
°
C
°
C
-40 to +150
-65 to +150
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP4XXXM3LM 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP5070H3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP5070H3BJR 功能描述:硅對稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP5070H3BJR-S 功能描述:硅對稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP5080H3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS