參數(shù)資料
型號(hào): TISP4XXXJ3BJ
廠商: Bourns Inc.
英文描述: BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述: 雙向可控硅過(guò)電壓保護(hù)器
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 192K
代理商: TISP4XXXJ3BJ
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
Figure 6.
Figure 7.
Figure 8.
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
V
D
- Off-state Voltage - V
0.5
1
2
3
5
10
20 30
50
100150
C
D
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
T
J
= 25
°
C
V
d
= 1 Vrms
TC4JABB
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
V
DRM
- Repetitive Peak Off-State Voltage - V
50
60 70 80 90
150
200
250 300 350
100
40
50
60
70
80
90
C = C
off(-2 V)
- C
off(-50 V)
TC4JAE
NORMALIZED CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
2.5
V
d
= 10 mV rms, 1 MHz
V
D
— Off-State Voltage — V
0.5 0.7
2
3
4 5
7
20
30 4050
1
10
N
0.0
0.5
1.0
1.5
2.0
TC4JCC
V
d
= 1 V rms, 1 MHz
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