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參數(shù)資料
| 型號： | TISP4XXXH4BJ |
| 廠商： | Bourns Inc. |
| 英文描述： | HIGH HOLDING CURRENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 舉行高電流雙向可控硅過電壓保護器 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 391K |
| 代理商： | TISP4XXXH4BJ |
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Thermal Characteristics
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Test Conditions
Min.
Typ.
Max.
±
5
±
10
±
165
±
180
±
200
±
265
±
300
±
350
±
174
±
189
±
210
±
276
±
311
±
363
±
0.8
±
3
±
0.8
Unit
I
DRM
V
D
= V
DRM
T
A
= 25
°
C
T
A
= 85
°
C
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
μ
A
V
(BO)
Breakover voltage
dv/dt =
±
750 V/ms,
R
SOURCE
= 300
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤
±
1000 V/
μ
s, Linear voltage ramp,
Maximum ramp value =
±
500 V
di/dt =
±
20 A/
μ
s, Linear current ramp,
Maximum ramp value =
±
10 A
V
I
(BO)
V
T
I
H
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt =
±
750 V/ms,
I
T
=
±
5 A, t
W
= 100
μ
s
I
T
=
±
5 A, di/dt = -/+30 mA/ms
R
SOURCE
= 300
±
0.15
A
V
A
±
0.225
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±
5
kV/
μ
s
I
D
V
D
=
±
50 V
f = 100 kHz,
T
A
= 85
°
C
±
10
90
84
79
67
74
62
35
28
33
26
μ
A
C
off
Off-state capacitance
V
d
= 1 V rms, V
D
= 0,
f = 100 kHz,
V
d
= 1 V rms, V
D
= -1 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -2 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -50 V
f = 100 kHz,
(see Note 6)
V
d
= 1 V rms, V
D
= -100 V
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
80
70
71
60
65
55
30
24
28
22
pF
NOTE
6: To avoid possible voltage clipping, the ‘4125 is tested with V
D
= -98 V.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R
θ
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °
113
C /W
°
C
50
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
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相關代理商/技術參數(shù) |
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|---|---|
| TISP4XXXJ1BJ | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
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