參數(shù)資料
型號(hào): TISP4XXXH3LM
廠商: Bourns Inc.
英文描述: BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述: 雙向可控硅過電壓保護(hù)器
文件頁(yè)數(shù): 3/16頁(yè)
文件大?。?/td> 449K
代理商: TISP4XXXH3LM
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (continued)
This TISP4xxxH3LM range consists of seventeen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a
DO-92 (LM) cylindrical plastic package. The TISP4xxxH3LM is a straight lead DO-92 supplied in bulk pack and on tape and reel. The
TISP4xxxH3LMF is a formed lead DO-92 supplied only on tape and reel. For lower rated impulse currents in the DO-92 package, the 50 A 10/
1000 TISP4xxxM3LM series is available.
TISP4xxxH3LM Overvoltage Protector Series
Rating
Symbol
Value
±
58
±
65
±
75
±
90
±
100
±
120
±
135
±
145
±
160
±
180
±
190
±
200
±
220
±
230
±
275
±
320
±
300
Unit
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4250
‘4260
‘4290
‘4300
‘4350
‘4395
‘4400
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10
μ
s (GR-1089-CORE, 2/10
μ
s voltage wave shape)
8/20
μ
s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160
μ
s (FCC Part 68, 10/160
μ
s voltage wave shape)
5/200
μ
s (VDE 0433, 10/700
μ
s voltage wave shape)
0.2/310
μ
s (I 31-24, 0.5/700
μ
s voltage wave shape)
5/310
μ
s (ITU-T K20/21, 10/700
μ
s voltage wave shape)
5/310
μ
s (FTZ R12, 10/700
μ
s voltage wave shape)
5/320
μ
s (FCC Part 68, 9/720
μ
s voltage wave shape)
10/560
μ
s (FCC Part 68, 10/560
μ
s voltage wave shape)
10/1000
μ
s (GR-1089-CORE, 10/1000
μ
s voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 100 A
Junction temperature
Storage temperature range
I
TSP
A
500
300
250
220
200
200
200
200
160
100
I
TSM
55
60
2.3
400
A
di
T
/dt
T
J
T
stg
A/
μ
s
°
C
°
C
-40 to +150
-65 to +150
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH3LM must be in thermal equilibrium with T
J
= 25
°
C.
3. The surge may be repeated after the TISP4xxxH3LM returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/
°
C for ambient
temperatures above 25
°
C.
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
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