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參數(shù)資料
| 型號： | TISP4CXXXH3BJ |
| 廠商： | Bourns Inc. |
| 英文描述： | LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 低電容雙向可控硅過電壓保護(hù)器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 187K |
| 代理商： | TISP4CXXXH3BJ |
SEPTEMBER 2004 – REVISED FEBRUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Rating
Symbol
Value
±
100
Unit
Repetitive peak off-state voltage
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
V
DRM
±
220
±
275
±
320
'4C145H3BJ
'4C220H3BJ
±
120
±
145
±
180
'4C250H3BJ
±
190
'4C125H3BJ
V
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10
μ
s (GR-1089-CORE, 2/10
μ
s voltage wave shape)
10/160
μ
s (TIA-968-A, 10/160
μ
s voltage wave shape)
5/310
μ
s (ITU-T K.44, 10/700
μ
s voltage wave shape used in K.20/21/45)
10/560
μ
s (TIA-968-A, 10/560
μ
s voltage wave shape)
10/1000
μ
s (GR-1089-CORE, 10/1000
μ
s voltage wave shape)
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
20 ms, 50 Hz (full sine wave)
1000 s, 50 Hz
Junction temperature
Storage temperature range
I
PPSM
±
500
±
200
±
150
±
100
±
100
A
I
TSM
30
2.1
A
T
J
T
stg
-40 to +150
-65 to +150
°
C
°
C
NOTES: 1. Initially the device must be in thermal equilibrium with T
J
= 25
°
C.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
TISP4CxxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
±
5
±
10
Unit
I
DRM
Repetitive peak off-state current
V
D
= V
DRM
T
A
= 25
°
C
T
A
= 85
°
C
'4C125H3BJ
μ
A
V
(BO)
Breakover voltage
dv/dt =
±
250 V/ms, R
SOURCE
= 300
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
±
290
±
350
±
395
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
±
145
±
180
±
220
'4C250H3BJ
±
250
±
125
V
V
(BO)
Impulse breakover voltage
dv/dt
≤
±
1000 V/
μ
s, Linear voltage ramp,
Maximum ramp value =
±
500 V
di/dt =
±
10 A/
μ
s, Linear current ramp,
Maximum ramp value =
±
10 A
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
±
300
±
360
±
405
±
600
±
3
±
600
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
'4C220H3BJ
'4C250H3BJ
±
155
±
190
±
230
'4C250H3BJ
±
260
'4C125H3BJ
±
135
V
I
(BO)
V
T
I
H
Breakover current
On-state voltage
Holding current
dv/dt =
±
250 V/ms, R
SOURCE
= 300
I
T
=
±
5 A, t
w
= 100
μ
s
I
T
=
±
5 A, di/dt =
±
30 mA/ms
mA
V
mA
±
150
C
O
Off-state capacitance
f = 1 MHz, V
d
= 1 V rms, V
D
= -2 V
40
'4C125H3BJ
50
'4C145H3BJ
'4C180H3BJ
45
pF
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