參數(shù)資料
型號(hào): TISP4A270H3BJ
廠商: BOURNS INC
元件分類(lèi): 浪涌電流限制器
英文描述: LCAS R LINE Protector
中文描述: 217 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
封裝: ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件頁(yè)數(shù): 2/11頁(yè)
文件大?。?/td> 242K
代理商: TISP4A270H3BJ
APRIL 2002 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (Continued)
These devices allow signal voltages up to the maximum off-state voltage value, V
DRM
, see Figure 1. Voltages above V
DRM
are clipped and will
not exceed the breakover voltage, V
, level. If sufficient current flows due to the overvoltage, the device switches into a low-voltage on-state
condition, which diverts the current from the overvoltage though the device. When the diverted current falls below the holding current, I
H
, level
the devices switches off and restores normal system operation.
TISP4A270H3BJ LCAS R
LINE
Protector
Overload Ratings, TA = 25
°
C (Unless Otherwise Noted)
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
The TISP4A270H3BJ is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. This high current
protection device is in a plastic SMB package (JEDEC DO-214AA) and supplied in embossed tape reel pack.
Rating
Symbol
Value
Unit
Maximum overload on-state current without open circuit, 50 Hz/60 Hz a.c. (see Note 5)
0.03 s
0.07 s
1.6 s
5.0 s
1000 s
I
T(OV)M
60
40
8
7
2.2
A rms
NOTE
5: Peak overload on-state current during a.c. power cross tests of GR-1089-CORE and UL 1950/60950. These electrical stress
levels may damage the TISP4A270H3BJ silicon chip. After test, the pass criterion is either that the device is functional or, if it is
faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected as the device is a
permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
Rating
Symbol
Value
+160/-222
148/-206
Unit
Repetitive peak off-state voltage, (see Note 1)
T
A
= 25
°
C
T
A
= -40
°
C
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2 and 3)
2/10 (GR-1089-CORE, 2/10 voltage wave shape)
5/310 (ITU-T K.44, 10/700
μ
s voltage wave shape used in K.20/45/21)
10/1000 (GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
I
PPSM
A
500
150
100
I
TSM
55
60
2.2
400
A
di
T
/dt
T
J
T
stg
A/
μ
s
°
C
°
C
-40 to +150
-65 to +150
NOTES: 1. See Figure 7 for voltage values at intermediate temperatures.
2. Initially, the TISP4A270H3BJ must be in thermal equilibrium with T
J
= 25
°
C.
3. The surge may be repeated after the TISP4A270H3BJ returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 6 for the current ratings at other durations. Derate current values at -0.61 %/
°
C for ambient
temperatures above 25
°
C.
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