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    參數(shù)資料
    型號(hào): TISP4400M3LMR
    廠商: POWER INNOVATIONS LTD
    元件分類: 浪涌電流限制器
    英文描述: BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
    中文描述: SILICON SURGE PROTECTOR, DO-92
    封裝: PLASTIC, DO-92, 2 PIN
    文件頁(yè)數(shù): 3/16頁(yè)
    文件大小: 454K
    代理商: TISP4400M3LMR
    NOVEMBER 1997 - REVISED FEBRUARY 2005
    Specifications are subject to change without notice.
    Customers should verify actual device performance in their specific applications.
    Description (continued)
    The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
    the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
    current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
    diverted current subsides.
    TISP4xxxM3LM Overvoltage Protector Series
    Rating
    Symbol
    Value
    ±
    58
    ±
    65
    ±
    75
    ±
    90
    ±
    100
    ±
    120
    ±
    135
    ±
    145
    ±
    160
    ±
    180
    ±
    190
    ±
    200
    ±
    220
    ±
    230
    ±
    275
    ±
    320
    ±
    300
    Unit
    Repetitive peak off-state voltage, (see Note 1)
    ‘4070
    ‘4080
    ‘4095
    ‘4115
    ‘4125
    ‘4145
    ‘4165
    ‘4180
    ‘4220
    ‘4240
    ‘4250
    ‘4260
    ‘4290
    ‘4300
    ‘4350
    ‘4395
    ‘4400
    V
    DRM
    V
    Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
    2/10
    μ
    s (GR-1089-CORE, 2/10
    μ
    s voltage wave shape)
    8/20
    μ
    s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
    10/160
    μ
    s (FCC Part 68, 10/160
    μ
    s voltage wave shape)
    5/200
    μ
    s (VDE 0433, 10/700
    μ
    s voltage wave shape)
    0.2/310
    μ
    s (I 31-24, 0.5/700
    μ
    s voltage wave shape)
    5/310
    μ
    s (ITU-T K.20/21, 10/700
    μ
    s voltage wave shape)
    5/310
    μ
    s (FTZ R12, 10/700
    μ
    s voltage wave shape)
    5/320
    μ
    s (FCC Part 68, 9/720
    μ
    s voltage wave shape)
    10/560
    μ
    s (FCC Part 68, 10/560
    μ
    s voltage wave shape)
    10/1000
    μ
    s (GR-1089-CORE, 10/1000
    μ
    s voltage wave shape)
    Non-repetitive peak on-state current (see Notes 2, 3 and 5)
    20 ms (50 Hz) full sine wave
    16.7 ms (60 Hz) full sine wave
    1000 s 50 Hz/60 Hz a.c.
    Initial rate of rise of on-state current,
    Exponential current ramp, Maximum ramp value < 100 A
    Junction temperature
    Storage temperature range
    I
    TSP
    A
    300
    220
    120
    110
    100
    100
    100
    100
    75
    50
    I
    TSM
    30
    32
    2.1
    300
    A
    di
    T
    /dt
    T
    J
    T
    stg
    A/
    μ
    s
    °
    C
    °
    C
    -40 to +150
    -65 to +150
    NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
    2. Initially the TISP4xxxM3LM must be in thermal equilibrium with T
    J
    = 25
    °
    C.
    3. The surge may be repeated after the TISP4xxxM3LM returns to its initial conditions.
    4. See Applications Information and Figure 11 for current ratings at other temperatures.
    5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
    track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/
    °
    C for ambient
    temperatures above 25
    °
    C
    Absolute Maximum Ratings, TA = 25
    °
    C (Unless Otherwise Noted)
    This TISP4xxxM3LM range consists of seventeen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
    guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a
    DO-92 (LM) cylindrical plastic package. The TISP4xxxM3LM is a straight lead DO-92 supplied in bulk pack and on tape and reel. The
    TISP4xxxM3LMF is a formed lead DO-92 supplied only on tape and reel. For higher rated impulse currents in the DO-92 package, the 100 A
    10/1000 TISP4xxxH3LM series is available.
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    TISP4400M3LMR-S 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
    TISP4400M3LM-S 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 Single bidirectional protector RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
    TISP4400T3BJR-S 制造商:Bourns Inc 功能描述:THYRISTOR TSPD 335V 30A DO-214AA TR - Tape and Reel
    TISP4500H3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
    TISP4500H3BJR 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA