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參數(shù)資料
| 型號(hào)： | TISP4395J3BJ |
| 廠商： | Bourns Inc. |
| 英文描述： | BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙向可控硅過電壓保護(hù)器 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 192K |
| 代理商： | TISP4395J3BJ |
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
TISP4xxxJ3BJ Overvoltage Protector Series
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage
'4290
'4350
'4395
V
DRM
±
220
±
275
±
320
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
PPSM
A
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1000
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
800
10/160 (TIA-968-A (Replaces FCC Part 68), 10/160 voltage wave shape)
400
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
370
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
350
5/320 (TIA-968-A (Replaces FCC Part 68), 9/720 voltage wave shape, single)
350
10/560 (TIA-968-A (Replaces FCC Part 68), 10/560 voltage wave shape)
250
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
200
Non-repetitive peak on-state current (see Notes 1 and 2)
I
TSM
80
100
A
50 Hz, 1 cycle
60 Hz, 1 cycle
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 50 A
di
T
/dt
T
J
T
stg
800
A/
μ
s
Junction temperature
-40 to +150
°
C
Storage temperature range
-65 to +150
°
C
NOTES: 1. Initially, the device must be in thermal equilibrium with T
J
= 25
°
C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
=
±
V
DRM
T
A
= 25
°
C
T
A
= 85
°
C
'4290
'4350
'4395
±
5
±
10
μ
A
V
(BO)
AC breakover voltage
dv/dt =
±
250 V/ms,
R
SOURCE
= 300
±
290
±
350
±
395
V
V
(BO)
Ramp breakover
voltage
dv/dt
≤
±
1000 V/
μ
s, Linear voltage ramp,
Maximum ramp value =
±
500 V
di/dt =
±
20 A/
μ
s, Linear current ramp,
Maximum ramp value =
±
10 A
'4290
'4350
'4395
±
303
±
364
±
409
V
V
(BO)
Impulse breakover
voltage
2/10 wave shape, I
PP
=
±
1000 A, R
S
= 2.5
,
(see Note 3)
'4290
'4350
'4395
±
320
±
386
±
434
V
I
(BO)
I
H
Breakover current
dv/dt =
±
250 V/ms,
R
SOURCE
= 300
±
600
mA
Holding current
I
T
=
±
5 A, di/dt = +/-30 mA/ms
±
150
mA
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85 V
DRM
±
5
kV/
μ
s
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| TISP4395J3BJR | BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP4395J3BJR | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4395J3BJR-S | 功能描述:硅對(duì)稱二端開關(guān)元件 320Vdrm 395 V(BO) RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP4395J3BJ-S | 功能描述:硅對(duì)稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP4395L3AJ | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4395L3AJR | 功能描述:硅對(duì)稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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