參數(shù)資料
型號(hào): TISP3072F3
廠商: Power Innovations International, Inc.
英文描述: DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
中文描述: 雙對(duì)稱瞬態(tài)電壓抑制器
文件頁數(shù): 3/16頁
文件大?。?/td> 415K
代理商: TISP3072F3
3
MARCH 1994 - REVISED SEPTEMBER 1997
TISP3072F3, TISP3082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
NOTES: 6
These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms,
Source Resistance = 300
dv/dt = ±1000 V/μs,
±72
±82
V
V
(BO)
Impulse breakover volt-
age
di/dt < 20 A/μs
Source Resistance = 50
dv/dt = ±250 V/ms,
±86
±96
V
I
(BO)
Breakover current
Source Resistance = 300
I
T
= ±5 A,
t
W
= 100 μs
di/dt = -/+30 mA/ms
Linear voltage ramp,
±0.15
±0.6
±0.15
±0.6
A
V
T
I
H
On-state voltage
Holding current
±3
±3
V
A
±0.15
±0.15
dv/dt
Critical rate of rise of
off-state voltage
Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
f = 100 kHz,
V
d
= 100 mV
Third terminal voltage = -50 V to +50 V
(see Notes 6 and 7)
±5
±5
kV/μs
I
D
Off-state current
±10
140
85
40
±10
140
85
40
μA
pF
pF
pF
C
off
Off-state capacitance
V
D
= 0,
V
D
= -5 V
V
D
= -50 V
82
49
25
82
49
25
electrical characteristics for the T and G or the R and G terminals, T
J
= 25°C (Continued)
PARAMETER
TEST CONDITIONS
TISP3072F3
MIN
TISP3082F3
MIN
UNIT
MAX
MAX
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAA
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