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參數(shù)資料
| 型號： | TISP1082L |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS |
| 中文描述： | 雙不對稱瞬態(tài)電壓抑制器 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 134K |
| 代理商： | TISP1082L |
TISP1082L
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
FEBRUARY 1990 - REVISED SEPTEMBER 1997
2
P R O D U C T I N F O R M A T I O N
absolute maximum ratings at
25°C
case temperature (unless otherwise noted)
RATING
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
8/20 μs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 μs)
10/160 μs (FCC Part 68, open-circuit voltage wave shape 10/160 μs)
5/200 μs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 μs)
0.2/310 μs (RLM 88, open-circuit voltage wave shape1.5 kV, 0.5/700 μs)
5/310 μs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 μs)
5/310 μs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 μs)
10/560 μs (FCC Part 68, open-circuit voltage wave shape 10/560 μs)
10/1000 μs (REA PE-60, open-circuit voltage wave shape 10/1000 μs)
Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2)
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Operating free - air temperature range
Storage temperature range
Lead temperature 1.5 mm from case for 10 s
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
electrical characteristics for the A and B terminals, T
J
= 25°C
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
NOTES: 5. These parameters must be measured using pulse techniques, t
w
= 100
μ
s, duty cycle
≤
2%.
6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
7: Linear rate of rise, maximum voltage limited to 80 % V
Z
(minimum)..
SYMBOL
VALUE
UNIT
I
TSP
A
150
60
50
38
50
50
45
50
10
250
150
0 to 70
-40 to +150
260
I
TSM
di
T
/dt
T
J
A rms
A/μs
°C
°C
°C
°C
T
stg
T
lead
PARAMETER
Reference zener
voltage
Off-state leakage
current
Off-state capacitance
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Z
I
Z
=
±
1mA
±
58
V
I
D
V
D
=
±
50 V
±
10
μ
A
C
off
V
D
=
0
f = 1 kHz
(see Note 4)
1
5
pF
electrical characteristics for the A and C or the B and C terminals, T
J
= 25°C
PARAMETER
Reference zener
voltage
Temperature coefficient
of reference voltage
Breakover voltage
Breakover current
Forward voltage
Peak on-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state leakage
current
Off-state capacitance
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Z
I
Z
= - 1mA
- 58
V
∝
V
Z
0.1
%/
o
C
V
(BO)
I
(BO)
V
F
V
TM
I
H
(see Notes 5 and 6)
(see Note 5)
I
F
= 5 A
I
T
=
- 5 A
(see Note 5)
- 82
- 0.6
3
- 3
V
A
V
V
- 0.15
(see Notes 5 and 6)
(see Notes 5 and 6)
- 2.2
- 150
mA
dv/dt
(see Note 7)
- 5
kV/
μ
s
I
D
V
D
= - 50 V
- 10
μ
A
C
off
V
D
= 0
f = 1 kHz
(see Note 4)
300
500
pF
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