參數(shù)資料
型號: TIPP32A
廠商: Power Innovations International, Inc.
英文描述: PNP SILICON POWER TRANSISTORS
中文描述: 進步黨硅功率晶體管
文件頁數(shù): 2/6頁
文件大?。?/td> 88K
代理商: TIPP32A
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
2
MAY 1989 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -5 mA
(see Note 4)
I
B
= 0
TIPP32
TIPP32A
TIPP32B
TIPP32C
TIPP32
TIPP32A
TIPP32B
TIPP32C
TIPP32/32A
TIPP32B/32C
-40
-60
-80
-100
V
I
CES
Collector-emitter
cut-off current
V
CE
= -40 V
V
CE
= -60 V
V
CE
= -80 V
V
CE
= -100 V
V
CE
= -30 V
V
CE
= -60 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
mA
I
CEO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
mA
I
EBO
V
EB
= -5 V
I
C
= 0
-1
mA
h
FE
V
CE
= -4 V
V
CE
= -4 V
I
C
= -1 A
I
C
= -2 A
(see Notes 4 and 5)
20
10
V
CE(sat)
I
B
= -375 mA
I
C
= -2 A
(see Notes 4 and 5)
-1
V
V
BE
V
CE
= -4 V
I
C
= -2 A
(see Notes 4 and 5)
-1.5
V
h
fe
V
CE
= -10 V
I
C
= -0.5 A
f = 1 kHz
20
|
h
fe
|
V
CE
= -10 V
I
C
= -0.5 A
f = 1 MHz
3
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