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參數(shù)資料
| 型號(hào)： | TIPP31C |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON POWER TRANSISTORS |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | TIPP31C |
TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
2
MAY 1989 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 5 mA
(see Note 4)
I
B
= 0
TIPP31
TIPP31A
TIPP31B
TIPP31C
TIPP31
TIPP31A
TIPP31B
TIPP31C
TIPP31/31A
TIPP31B/31C
40
60
80
100
V
I
CES
Collector-emitter
cut-off current
V
CE
= 40 V
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
V
CE
= 30 V
V
CE
= 60 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
0.2
0.2
0.2
0.2
0.3
0.3
mA
I
CEO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
mA
I
EBO
V
EB
= 5 V
I
C
= 0
1
mA
h
FE
V
CE
= 4 V
V
CE
= 4 V
I
C
= 1 A
I
C
= 2 A
(see Notes 4 and 5)
20
10
V
CE(sat)
I
B
= 375 mA
I
C
= 2 A
(see Notes 4 and 5)
1
V
V
BE
V
CE
= 4 V
I
C
= 2 A
(see Notes 4 and 5)
1.5
V
h
fe
V
CE
= 10 V
I
C
= 0.5 A
f = 1 kHz
20
|
h
fe
|
V
CE
= 10 V
I
C
= 0.5 A
f = 1 MHz
3
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|---|---|
| TIPP32C | PNP SILICON POWER TRANSISTORS |
| TIPP32 | PNP SILICON POWER TRANSISTORS |
| TIPP32A | PNP SILICON POWER TRANSISTORS |
| TIPP32B | PNP SILICON POWER TRANSISTORS |
| TIS24-32AP | Industrial Power Supplies (TIS Series, 50?600 Watt) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIPP31C | 制造商:Bourns Inc 功能描述:TRANSISTOR NPN TO-92 |
| TIPP31C-S | 功能描述:兩極晶體管 - BJT 100V 2A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIPP31-S | 功能描述:兩極晶體管 - BJT 40V 2A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIPP32 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:PNP SILICON POWER TRANSISTORS |
| TIPP32A | 制造商:Bourns Inc 功能描述: |
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