參數(shù)資料
型號： TIP30A
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Complementary Silicon Plastic Power Transistors(互補型硅塑料功率晶體管)
中文描述： 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, CASE 221A-09, 3 PIN
文件頁數(shù)： 4/5頁
文件大小： 67K
代理商： TIP30A
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
http://onsemi.com
4
0.03
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
0.03
h
0.5
5.0
70
50
3.0
100
7.0
300
30
0.1
0.3
0.07
1.0
T
J
= 150
°
C
25
°
C
55
°
C
V
CE
= 2.0 V
500
10
3.0
2.0
t
Figure 2. TurnOff Time
I
C
, COLLECTOR CURRENT (AMP)
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
1/8 t
f
T
J
= 25
°
C
t
s
′
TURNON PULSE
APPROX
+11 V
V
in
0
V
EB(off)
t
1
APPROX
+11 V
V
in
t
2
TURNOFF PULSE
t
3
t
1
≤
7.0 ns
100 < t
2
< 500 s
t
3
< 15 ns
DUTY CYCLE
≈
2.0%
APPROX 9.0 V
R
B
and R
C
VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
SCOPE
R
C
R
B
V
CC
V
in
C
jd
<< C
eb
4.0 V
Figure 3. Switching Time Equivalent Circuit
0.03
Figure 4. TurnOn Time
I
C
, COLLECTOR CURRENT (AMP)
0.02
0.1
3.0
0.07
0.05
1.0
1.0
I
C
/I
B
= 10
T
J
= 25
°
C
t
r
@ V
CC
= 10 V
t
0.5
0.3
0.1
0.05
0.3
0.5
t
d
@ V
EB(off)
= 2.0 V
0.03
0.7
2.0
0.07
0.7
t
r
@ V
CC
= 30 V
0.05
0.7
t
f
@ V
CC
= 10 V
t
f
@ V
CC
= 30 V
0.07
0.05
1.0
0.7
0.5
0.3
0.2
0.1
0.03
0.1
3.0
1.0
0.05
0.3
0.5
0.07
0.7
2.0
0.2
Figure 5. Active Region Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE, (VOLTS)
10
0.1
10
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
BONDING WIRE LIMITED
I
1.0
20
100
40
3.0
4.0
0.1
TIP29, 30
TIP29A, 30A
TIP29B, 30B
TIP29C, 30C
T
J
= 150
°
C
CURVES APPLY BELOW
RATED V
CEO
1 ms
dc
5 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
相關PDF資料
PDF描述
TIP29A Complementary Silicon Plastic Power Transistors(互補型硅塑料功率晶體管)
TIP29B Complementary Silicon Plastic Power Transistors(互補型硅塑料功率晶體管)
TIP30B Complementary Silicon Plastic Power Transistors(互補型硅塑料功率晶體管)
TIP30C Complementary Silicon Plastic Power Transistors(互補型硅塑料功率晶體管)
TIP32B Complementary Silicon Plastic Power Transistors(互補型，塑料功率晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
TIP30A 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-220
TIP30A-BP 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:1.0 Amp Complementary Silicon Power Transistors
TIP30AG 功能描述:兩極晶體管 - BJT 1A 60V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
TIP30A-S 功能描述:兩極晶體管 - BJT 60V 1A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
TIP30ATU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*