參數(shù)資料
型號: TIP3055
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: POWER TRANSISTORS COMPLEMENTARY SILICON
中文描述: 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
文件頁數(shù): 2/4頁
文件大小: 117K
代理商: TIP3055
2
Motorola Bipolar Power Transistor Device Data
(VCE = 70 Vdc, RBE = 100 Ohms)
Collector Cutoff Current
ICEO
0.7
mAdc
(VBE = 7.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
hFE
(IC = 4.0 Adc, IB = 400 mAdc)
20
70
Base–Emitter On Voltage
VBE(on)
3.0
1.8
Vdc
Current Gain — Bandwidth Product
Small–Signal Current Gain
NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.
hfe
2.5
15
MHz
kHz
I
10
5.0
3.0
0.1
0.3
0.2
2.0
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
2.0
4.0
6.0
10
20
0.5
1.0
20
30
50
100
40
60
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25
°
C
TJ = 150
°
C
300
μ
s
1.0 ms
10 ms
dc
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature.
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