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參數(shù)資料
| 型號： | TIP29B |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 30 WATTS |
| 中文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 137K |
| 代理商： | TIP29B |
2
Motorola Bipolar Power Transistor Device Data
0.03
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.03
h
0.5
5.0
70
50
3.0
100
7.0
300
30
0.1
0.3
0.07
1.0
TJ = 150
°
C
25
°
C
–55
°
C
VCE = 2.0 V
500
10
3.0
2.0
t
μ
Figure 2. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
IB1 = IB2
IC/IB = 10
ts
′
= ts – 1/8 tf
TJ = 25
°
C
ts
′
TURN–ON PULSE
APPROX
+11 V
Vin 0
VEB(off)
t1
APPROX
+11 V
Vin
t2
TURN–OFF PULSE
t3
t1
≤
7.0 ns
100 < t2 < 500
μ
s
t3 < 15 ns
DUTY CYCLE
≈
2.0%
APPROX –9.0 V
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
–4.0 V
Figure 3. Switching Time Equivalent Circuit
0.03
Figure 4. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.1
3.0
0.07
0.05
1.0
1.0
IC/IB = 10
TJ = 25
°
C
tr @ VCC = 10 V
t
μ
0.5
0.3
0.1
0.05
0.3
0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
0.07
0.7
tr @ VCC = 30 V
0.05
0.7
tf @ VCC = 10 V
tf @ VCC = 30 V
0.07
0.05
1.0
0.7
0.5
0.3
0.2
0.1
0.03
0.1
3.0
1.0
0.05
0.3
0.5
0.07
0.7
2.0
0.2
Figure 5. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE, (VOLTS)
10
0.1
10
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25
°
C
BONDING WIRE LIMITED
I
1.0
20
100
40
3.0
4.0
0.1
TIP29B, 30B
TIP29C, 30C
TJ = 150
°
C
CURVES APPLY BELOW
RATED VCEO
1 ms
dc
5 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE opera-
tion; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIP29-B | 功能描述:兩極晶體管 - BJT 1.0A 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP29B-B | 功能描述:兩極晶體管 - BJT 1.0A 80V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP29B-BP | 功能描述:兩極晶體管 - BJT 1.0A 80V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP29BG | 功能描述:兩極晶體管 - BJT 1A 80V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP29-BP | 功能描述:兩極晶體管 - BJT 1.0A 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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