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參數(shù)資料
| 型號： | TIP127 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium Power Complementary Silicon Transistors(塑料，中等功率，互補型晶體管) |
| 中文描述： | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 91K |
| 代理商： | TIP127 |
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
http://onsemi.com
5
20
1.0
Figure 5. ActiveRegion Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0
5.0
20
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
0.5
I
T
J
= 150
°
C
dc
1ms
100 s
0.2
0.1
10
0.05
5ms
3.0
7.0
30
70
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
500 s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
300
0.1
V
R
, REVERSE VOLTAGE (VOLTS)
30
2.0
5.0
10
20
100
50
0.2
0.5
1.0
C
100
50
T
J
= 25
°
C
C
ib
70
C
ob
PNP
NPN
Figure 6. SmallSignal Current Gain
10,000
1.0
f, FREQUENCY (kHz)
10
20
50
100
200
1000
2.0
5.0
10
3000
2000
300
200
100
T
C
= 25
°
C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
1000
PNP
NPN
Figure 7. Capacitance
30
20
500
h5000
200
相關PDF資料 |
PDF描述 |
|---|---|
| TIP131 | Darlington Complementary Silicon Power Transistors(互補硅功率達林頓晶體管) |
| TIP132 | Darlington Complementary Silicon Power Transistors(互補硅功率達林頓晶體管) |
| TIP137 | Darlington Complementary Silicon Power Transistors(互補硅功率達林頓晶體管) |
| TIP140F | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內(nèi)置基極-射極分流電阻單片結構）) |
| TIP140 | Darlington Complementary Silicon Power Transistors(互補硅功率達林頓晶體管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TIP-127 | 制造商:B&K Precision Corporation 功能描述: |
| TIP127 HAR91 | 制造商:HAR 功能描述:TIP127 |
| TIP127 | 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| TIP127_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Darlington Transistor |
| TIP127_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP EPITAXIAL TRANSISTOR |
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