參數(shù)資料
型號(hào)： TIP126
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Plastic Medium Power Complementary Silicon Transistors(塑料，中等功率，互補(bǔ)型晶體管)
中文描述： 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, CASE 221A-09, 3 PIN
文件頁數(shù)： 5/7頁
文件大?。?/td> 91K
代理商： TIP126
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
http://onsemi.com
5
20
1.0
Figure 5. ActiveRegion Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0
5.0
20
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
0.5
I
T
J
= 150
°
C
dc
1ms
100 s
0.2
0.1
10
0.05
5ms
3.0
7.0
30
70
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
500 s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
300
0.1
V
R
, REVERSE VOLTAGE (VOLTS)
30
2.0
5.0
10
20
100
50
0.2
0.5
1.0
C
100
50
T
J
= 25
°
C
C
ib
70
C
ob
PNP
NPN
Figure 6. SmallSignal Current Gain
10,000
1.0
f, FREQUENCY (kHz)
10
20
50
100
200
1000
2.0
5.0
10
3000
2000
300
200
100
T
C
= 25
°
C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
1000
PNP
NPN
Figure 7. Capacitance
30
20
500
h5000
200
相關(guān)PDF資料
PDF描述
TIP127 Plastic Medium Power Complementary Silicon Transistors(塑料，中等功率，互補(bǔ)型晶體管)
TIP131 Darlington Complementary Silicon Power Transistors(互補(bǔ)硅功率達(dá)林頓晶體管)
TIP132 Darlington Complementary Silicon Power Transistors(互補(bǔ)硅功率達(dá)林頓晶體管)
TIP137 Darlington Complementary Silicon Power Transistors(互補(bǔ)硅功率達(dá)林頓晶體管)
TIP140F NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIP126 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-220 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220
TIP126_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Darlington Transistor
TIP126-BP 功能描述:兩極晶體管 - BJT PNP -80V -5A 40W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
TIP126D 功能描述:達(dá)林頓晶體管 800V 12A SCR RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
TIP126G 功能描述:達(dá)林頓晶體管 BIP PNP 8A 80V RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*