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參數(shù)資料
| 型號： | TIP122 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium Power Complementary Silicon Transistors(塑料，中等功率，互補型晶體管) |
| 中文描述： | 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 91K |
| 代理商： | TIP122 |
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
http://onsemi.com
4
Figure 2. Switching Times Test Circuit
5.0
0.1
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t
2.0
1.0
0.5
0.05
0.2
0.3
0.5 0.7
1.0
2.0
3.0
10
0.3
0.2
0.7
PNP
NPN
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0
V
2
approx
+8.0 V
V
1
approx
12 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
25 s
0
R
B
51
D
1
+4.0 V
V
CC
30 V
R
C
TUT
≈
8.0 k
≈
120
SCOPE
for t
d
and t
r
, D
1
is disconnected
and V
= 0
For NPN test circuit reverse all polarities.
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
°
C
3.0
0.1
0.07
5.0 7.0
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r
(
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
JC(t)
= r(t) R
JC
R
JC
= 1.92
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
Z
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.3
0.07
0.03
0.02
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| TIP126 | Plastic Medium Power Complementary Silicon Transistors(塑料，中等功率，互補型晶體管) |
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| TIP131 | Darlington Complementary Silicon Power Transistors(互補硅功率達林頓晶體管) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TIP-122 | 制造商:Freescale Semiconductor 功能描述: |
| TIP122 | 制造商:ON Semiconductor 功能描述:TRANSISTOR DARLINGTON TO-220 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| TIP122_08 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN EPITAXIAL TRANSISTOR |
| TIP122_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Transistors |
| TIP122-BP | 功能描述:兩極晶體管 - BJT NPN 100V 5A 65W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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