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參數(shù)資料
| 型號(hào)： | TIP102 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium(塑料中等功率互補(bǔ)型硅晶體管) |
| 中文描述： | 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | TIP102 |
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
http://onsemi.com
4
Figure 2. Switching Times Test Circuit
5.0
0.1
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t
2.0
1.0
0.5
0.05
0.2
0.3
0.5 0.7
1.0
2.0
3.0
10
0.3
0.7
PNP
NPN
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0 V
V
2
approx
+8.0 V
V
1
approx
12 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
25 s
0
R
B
51
D
1
+4.0 V
V
CC
30 V
R
C
TUT
≈
8.0 k
≈
120
SCOPE
for t
d
and t
r
, D
1
is disconnected
and V
2
= 0
For NPN test circuit reverse all polarities.
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
°
C
3.0
0.2
0.1
0.07
5.0 7.0
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.010.01
0.5
0.2
0.1
0.07
0.05
0.02
r
(
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
JC(t)
= r(t) R
JC
R
JC
= 1.56
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
Z
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.3
0.03
0.02
20
1.0
Figure 5. ActiveRegion Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0
5.0
20
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
0.5
I
T
J
= 150
°
C
d-
c
1ms
100 s
0.2
0.1
10
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
0.05
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIP102 | 制造商:STMicroelectronics 功能描述:Darlington NPN Transistor 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR, NPN, 100V, TO-220 |
| TIP102_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| TIP102-BP | 功能描述:兩極晶體管 - BJT NPN 100V 8A 80W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP102G | 功能描述:達(dá)林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP102G-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN EPITAXIAL TRANSISTOR |
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