參數(shù)資料
型號: TIM7785-12UL
廠商: Toshiba Corporation
英文描述: BROAD BAND INTERNALLY MATCHED FET
中文描述: 寬帶內(nèi)部匹配場效應管
文件頁數(shù): 2/4頁
文件大?。?/td> 55K
代理商: TIM7785-12UL
2
T IM7785-12UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
RATING
Drain-Source Voltage
V
15
Gate-Source Voltage
V
-5
Drain Current
Total Power Dissipation (Tc= 25
°
C )
Channel Temperature
Storage
PACKAGE OUTLINE (2-16G1B)
A
W
°
C
°
C
10.0
62.5
175
-65 to +175
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Unit in mm
(1) Gate
(2) Source
(3) Drain
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
5
0
0.7
±
0.15
1
±
0
2
±
0
0
+
-
0
2
2
1
±
0
8
±
0
2
±
0
20.4
±
0.3
24.5 MAX.
4
C1.0
(1)
(2)
(2)
(3)
16.4 MAX.
相關PDF資料
PDF描述
TIM7785-4UL MICROWAVE POWER GaAs FET
TIP100 NPN Epitaxial Silicon Darlington Transistor(Monolithic Construction With Built In Base-Emitter Shunt Resistor)(NPN硅外延達林頓晶體管(內(nèi)置基極-射極分流電阻單片結構))
TIP101 NPN Epitaxial Silicon Darlington Transistor(Monolithic Construction With Built In Base-Emitter Shunt Resistor)(NPN硅外延達林頓晶體管(內(nèi)置基極-射極分流電阻單片結構))
TIP102 NPN Epitaxial Silicon Darlington Transistor(Monolithic Construction With Built In Base-Emitter Shunt Resistor)(NPN硅外延達林頓晶體管(內(nèi)置基極-射極分流電阻單片結構))
TIP101 Plastic Medium(塑料中等功率互補型硅晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
TIM7785-12UL_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz
TIM7785-16 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GAAS FET
TIM7785-16EL 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8.5 GHZ, 75 W - Trays
TIM7785-16SL 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8.5 GHZ, 75 W - Trays
TIM7785-16UL 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,8.5 GHZ, 75 W - Trays